IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 400 DS Surface Mount R ( )V = 10 V 0.55 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 63 g Dynamic dV/dt Rating Q (nC) 9.0 gs Repetitive Avalanche Rated Fast Switching Q (nC) 32 gd Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D 2 D PAK (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D G the highest power capability and the lowest possible S on-resistance in any existing surface mount package. The S 2 D PAK (TO-263) is suitable for high current applications N-Channel MOSFET because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF740S-GE3 SiHF740STRL-GE3 SiHF740STRR-GE3 a a IRF740SPbF IRF740STRLPbF IRF740STRRPbF Lead (Pb)-free a a SiHF740S-E3 SiHF740STL-E3 SiHF740STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 520 mJ AS a Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C 125 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 9.1 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91055 www.vishay.com S11-1049-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740S, SiHF740S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.49 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A - - 0.55 DS(on) GS D b Forward Transconductance g V = 50 V, I = 6.0 A 5.8 - - S fs DS D Dynamic Input Capacitance C - 1400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 330- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -120- rss Total Gate Charge Q -- 63 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --32 gd Turn-On Delay Time t -14 - d(on) Rise Time t -27 - r V = 200 V, I = 10 A, DD D ns b R = 9.1 , R = 20 , see fig. 10 g D Turn-Off Delay Time t -50- d(off) Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 40 SM S b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 370 790 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.8 8.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91055 2 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000