X-On Electronics has gained recognition as a prominent supplier of IRF830APBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF830APBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF830APBF Vishay

Hot IRF830APBF electronic component of Vishay
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Part No.IRF830APBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N Trench 500V 5A 4.5V @ 250uA 1.4 Ω @ 3A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF830APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.526 ea
Line Total: USD 1.53 
Availability - 857
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
873
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 40
Multiples : 1
40 : USD 0.806
75 : USD 0.806
250 : USD 0.806
750 : USD 0.806
2500 : USD 0.806

4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4273
10 : USD 1.2596
30 : USD 1.1535
100 : USD 1.0461
500 : USD 0.9971
1000 : USD 0.9761

954
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.342
10 : USD 1.0351
100 : USD 0.9614
500 : USD 0.8459
1000 : USD 0.8052

857
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.526
10 : USD 0.8022
27 : USD 0.6482
73 : USD 0.6132

67
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 54
Multiples : 1
54 : USD 0.7655

318
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 11
Multiples : 1
11 : USD 0.7064
2000 : USD 0.6917

24735
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 17
Multiples : 1
17 : USD 1.2604
50 : USD 1.2477
100 : USD 1.0445
500 : USD 1.0345
1000 : USD 0.9533
2000 : USD 0.842
5000 : USD 0.8252

   
Manufacturer
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RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the IRF830APBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830APBF and other electronic components in the MOSFETs category and beyond.

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IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Available Requirement R ()V = 10 V 1.4 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt Q (Max.) (nC) 24 COMPLIANT g Ruggedness Q (nC) 6.3 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 11 gd and Current Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed power Switching TYPICAL SMPS TOPOLOGIES S D G Two Transistor Forward S Half Bridge N-Channel MOSFET Full Bridge ORDERING INFORMATION Package TO-220AB IRF830APbF Lead (Pb)-free SiHF830A-E3 IRF830A SnPb SiHF830A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 5.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.2 A C a Pulsed Drain Current I 20 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 230 mJ AS a Repetitive Avalanche Current I 5.0 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 5.3 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 18 mH, R = 25 , I = 5.0 A (see fig. 12). J g AS c. I 5.0 A, dI/dt 370 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91061 www.vishay.com S11-0507-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF830A, SiHF830A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.5 V Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 3.0 A -- DS(on) GS D 1.4 b Forward Transconductance g V = 50 V, I = 3.0 A 2.8 - - fs DS D S Dynamic V = 0 V, Input Capacitance C -620 - GS iss Output Capacitance C -9V = 25 V, 3- oss DS Reverse Transfer Capacitance C -4.3- f = 1.0 MHz, see fig. 5 rss pF Output Capacitance C V = 0 V V = 1.0 V, f = 1.0 MHz 886 oss GS DS Output Capacitance C V = 0 V V = 400 V, f = 1.0 MHz 27 oss GS DS c Effective Output Capacitance C eff. V = 0 V V = 0 V to 400 V 39 oss GS DS Total Gate Charge Q -- 24 g I = 5.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 6.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -21 - r V = 250 V, I = 5.0 A, DD D ns Turn-Off Delay Time t -21- b d(off) R = 14 , R = 49 , see fig. 10 g D Fall Time t -15- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.0 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 20 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 5.0 A, V = 0 V 1.5 V J S GS Body Diode Reverse Recovery Time t - 430 650 ns rr b T = 25 C, I = 5.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 1.62 2.4 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91061 2 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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