PD - 95433 IRF8010SPbF SMPS MOSFET IRF8010LPbF Applications HEXFET Power MOSFET High frequency DC-DC converters UPS and Motor Control V R max I Lead-Free DSS DS(on) D 100V 15m 80A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) 2 TO-262 D Pak Fully Characterized Avalanche Voltage IRF8010L IRF8010S and Current Typical R = 12m DS(on) Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 80 GS D C I T = 100C Continuous Drain Current, V 10V 57 GS A D C Pulsed Drain Current I 320 DM P T = 25C Power Dissipation 260 W D C Linear Derating Factor 1.8 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 16 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.57 JC Junction-to-Case (end of life) R JC 0.80 C/W R CS Case-to-Sink, Flat, Greased Surface 0.50 Junction-to-Ambient (PCB Mount, steady state) R JA 40 Notes through are on page 8 www.irf.com 1 IRF8010S/LPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 12 15 V = 10V, I = 45A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 82 V V = 25V, I = 45A DS D Q Total Gate Charge 81 120 I = 80A g D Q gs Gate-to-Source Charge 22 nC V = 80V DS Q gd Gate-to-Drain Mille) Charge 26 V = 10V GS t d(on) Turn-On Delay Time 15 V = 50V DD t Rise Time 130 I = 80A r D t Turn-Off Delay Time 61 ns R = 39 d(off) G t Fall Time 120 V = 10V f GS C iss Input Capacitance 3830 V = 0V GS C oss Output Capacitance 480 V = 25V DS C rss Reverse Transfer Capacitance 59 pF = 1.0MHz C Output Capacitance 3830 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 280 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 530 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 310 mJ Avalanche Current I AR 45 A Repetitive Avalanche Energy E 26 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 80 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 320 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 80A, V = 0V SD J S GS t Reverse Recovery Time 99 150 ns T = 150C, I = 80A, V = 50V rr DD J F di/dt = 100A/s Q Reverse RecoveryCharge 460 700 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com