IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 500 DS Available in tape and reel R ( )V = 10 V 1.5 DS(on) GS Dynamic dV/dt rating Available Q max. (nC) 38 g Repetitive avalanche rated Q (nC) 5.0 gs Fast switching Available Q (nC) 22 Ease of paralleling gd Configuration Single Simple drive requirements Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 2 2 D PAK (TO-263) I PAK (TO-262) Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. G D S D DESCRIPTION S G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and halogen-free SiHF830S-GE3 SiHF830STRL-GE3 SiHF830L-GE3 a Lead (Pb)-free IRF830SPbF IRF830STRLPbF IRF830LPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.9 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 280 mJ AS a Avalanche Current I 4.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C 74 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 24 mH, R = 25 , I = 4.5 A (see fig. 12). DD J g AS c. I 4.5 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. E, 02-May-16 Document Number: 91064 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.7 A -- 1.5 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.7 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 610 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -68- rss Total Gate Charge Q -- 38 g I = 3.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 5.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -8.2 - d(on) Rise Time t -16 - r V = 250 V, I = 3.1 A, DD D ns b Turn-Off Delay Time t -42- d(off) R = 12 , R = 79 , see fig. 10 g D Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Gate Input Resistance R f = 1 MHz, open drain 0.5 - 2.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.5 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 18 SM S b Body Diode Voltage V T = 25 C, I = 4.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 320 640 ns rr b T = 25 C, I = 3.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.0 2.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. E, 02-May-16 Document Number: 91064 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000