X-On Electronics has gained recognition as a prominent supplier of IRF8313PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8313PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF8313PBF Infineon

IRF8313PBF electronic component of Infineon
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See Product Specifications
Part No.IRF8313PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 2 N Channel (Dual) 30V 9.7A 2.35V @ 25uA 15.5 mΩ @ 9.7A,10V SOIC-8_150mil RoHS
Datasheet: IRF8313PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.9062
10 : USD 0.7655
100 : USD 0.5867
500 : USD 0.4637
1000 : USD 0.371
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9015
10 : USD 0.7609
100 : USD 0.5839
500 : USD 0.4611
1000 : USD 0.3694
N/A

Obsolete
0
MOQ : 95
Multiples : 95
95 : USD 0.3652
1520 : USD 0.3226
N/A

Obsolete
0
MOQ : 95
Multiples : 95
95 : USD 0.3652
1520 : USD 0.3226
N/A

Obsolete
0

Multiples : 95
N/A

Obsolete
0
MOQ : 1389
Multiples : 1389
1389 : USD 0.2274
N/A

Obsolete
0
MOQ : 1
Multiples : 0
1 : USD 1.0375
10 : USD 0.8741
30 : USD 0.7926
95 : USD 0.7131
475 : USD 0.6636
1045 : USD 0.64
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7276
10 : USD 0.605
100 : USD 0.3902
1000 : USD 0.3119
2000 : USD 0.264
5000 : USD 0.2536
10000 : USD 0.2529
25000 : USD 0.2384
50000 : USD 0.2335
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1144
3 : USD 0.6787
5 : USD 0.4216
68 : USD 0.3963
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF8313PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8313PBF and other electronic components in the MOSFETs category and beyond.

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The IRF8313PBF is an N-channel dual MOSFET made by Infineon, offering 30V maximum drain-source voltage and 9.7A maximum drain current. It features a low gate threshold voltage of 2.35V, an on-resistance of 15.5mO at 9.7A, and a low gate charge of 25uA at 10V. The device is widely used in DC/DC converters, automotive, industrial and telecom applications. It is available in an SOIC-8_150mil RoHS package and is suitable for use in applications where compact size and energy efficiency are paramount.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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