X-On Electronics has gained recognition as a prominent supplier of IRF8736PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8736PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF8736PBF Infineon

IRF8736PBF electronic component of Infineon
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Part No.IRF8736PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Datasheet: IRF8736PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 40
Multiples : 40
40 : USD 0.3713
400 : USD 0.3531
2000 : USD 0.3166
N/A

Obsolete
0

Multiples : 3800
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7419
10 : USD 0.79
100 : USD 0.4449
1000 : USD 0.3742
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.142
5 : USD 1.2915
11 : USD 0.945
82 : USD 0.4111
N/A

Obsolete
0
MOQ : 285
Multiples : 95
285 : USD 0.3456
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the IRF8736PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8736PBF and other electronic components in the MOSFETs category and beyond.

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IRF8736PbF HEXFET Power MOSFET Applications V R max Qg Typ. DSS DS(on) Synchronous MOSFET for Notebook 4.8m V = 10V 30V 17nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D Very Low R at 4.5V V 3 6 DS(on) GS S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View 100% Tested for R G Lead -Free Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 18 D A I T = 70C Continuous Drain Current, V 10V 14.4 A GS D A Pulsed Drain Current I 144 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 9 www.irf.com 1 08/1/07 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 3.9 4.8 V = 10V, I = 18A DS(on) m GS D 5.5 6.8 V = 4.5V, I = 14.4A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 50A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.1 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 52 S V = 15V, I = 14.4A DS D Q g Total Gate Charge 17 26 Q gs1 Pre-Vth Gate-to-Source Charge 4.4 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 1.9 nC V = 4.5V GS Q gd Gate-to-Drain Charge 5.8 I = 14.4A D Q godr Gate Charge Overdrive 4.9 See Fig. 16 Q Switch Charge (Q + Q ) 7.7 sw gs2 gd Q Output Charge 7.1 nC V = 10V, V = 0V oss DS GS R Gate Resistance 1.3 2.2 G t d(on) Turn-On Delay Time 12 V = 15V, V = 4.5V DD GS t r Rise Time 15 I = 14.4A D t d(off) Turn-Off Delay Time 13 ns R = 1.8 G t f Fall Time 7.5 See Fig. 14 C iss Input Capacitance 2315 V = 0V GS C Output Capacitance 449 pF V = 15V oss DS C Reverse Transfer Capacitance 219 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 126 mJ AS Avalanche Current I AR 14.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 3.1 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 144 integral reverse (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 14.4A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 14.4A, V = 10V rr J F DD Q di/dt = 300A/s Reverse Recovery Charge 19 29 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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