IRF8736PBF Infineon

IRF8736PbF HEXFET Power MOSFET Applications V R max Qg Typ. DSS DS(on) Synchronous MOSFET for Notebook 4.8m V = 10V 30V 17nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D Very Low R at 4.5V V 3 6 DS(on) GS S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View 100% Tested for R G Lead -Free Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 18 D A I T = 70C Continuous Drain Current, V 10V 14.4 A GS D A Pulsed Drain Current I 144 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 9 www.irf.com 1 08/1/07 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 3.9 4.8 V = 10V, I = 18A DS(on) m GS D 5.5 6.8 V = 4.5V, I = 14.4A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 50A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.1 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 52 S V = 15V, I = 14.4A DS D Q g Total Gate Charge 17 26 Q gs1 Pre-Vth Gate-to-Source Charge 4.4 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 1.9 nC V = 4.5V GS Q gd Gate-to-Drain Charge 5.8 I = 14.4A D Q godr Gate Charge Overdrive 4.9 See Fig. 16 Q Switch Charge (Q + Q ) 7.7 sw gs2 gd Q Output Charge 7.1 nC V = 10V, V = 0V oss DS GS R Gate Resistance 1.3 2.2 G t d(on) Turn-On Delay Time 12 V = 15V, V = 4.5V DD GS t r Rise Time 15 I = 14.4A D t d(off) Turn-Off Delay Time 13 ns R = 1.8 G t f Fall Time 7.5 See Fig. 14 C iss Input Capacitance 2315 V = 0V GS C Output Capacitance 449 pF V = 15V oss DS C Reverse Transfer Capacitance 219 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 126 mJ AS Avalanche Current I AR 14.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 3.1 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 144 integral reverse (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 14.4A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 14.4A, V = 10V rr J F DD Q di/dt = 300A/s Reverse Recovery Charge 19 29 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com