IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 500 DS Definition R ( )V = 10 V 0.85 DS(on) GS Low Gate Charge Q Results in Simple Drive g Requirement Q (Max.) (nC) 38 g Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 9.0 gs Ruggedness Q (nC) 18 gd Fully Characterized Capacitance and Configuration Single Avalanche Voltage and Current Effective C Specified D oss Compliant to RoHS Directive 2002/95/EC 2 2 D PAK (TO-263) I PAK (TO-262) APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply G G D High Speed Power Switching S D S G TYPICAL SMPS TOPOLOGIES Two Transistor Forward S Half Bridge N-Channel MOSFET Full Bridge ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a a Lead (Pb)-free and Halogen-free SiHF840AS-GE3 SiHF840ASTRL-GE3 SiHF840ASTRR-GE3 SiHF840AL-GE3 a a IRF840ASPbF IRF840ASTRLPbF IRF840ASTRRPbF IRF840ALPbF Lead (Pb)-free a a SiHF840AS-E3 SiHF840ASTL-E3 SiHF840ASTR-E3 SiHF840AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 8.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.1 A C a Pulsed Drain Current I 32 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 510 mJ AS a Repetitive Avalanche Current I 8.0 A AR a Repetitive Avalanche Energy E 13 mJ AR T = 25 C 125 C Maximum Power Dissipation P W D T = 25 C 3.1 A c, e Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Temperature for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 16 mH, R = 25 , I = 8.0 A (see fig. 12). J g AS c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF840A, SiH840A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91066 www.vishay.com S11-1050-Rev. D, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R -- 40 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -- 1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.58 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 4.8 A - - 0.85 DS(on) GS D Forward Transconductance g V = 50 V, I = 4.8 A 3.7 - - S fs DS D Dynamic Input Capacitance C - 1018 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 155- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -8.0- rss pF Output Capacitance C V = 1.0 V, f = 1.0 MHz 1490 oss DS Output Capacitance C V = 0 VV = 400 V, f = 1.0 MHz 42 oss GS DS c, d Effective Output Capacitance C eff. V = 0 V to 480 V 56 oss DS Total Gate Charge Q -- 38 g I = 8.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 9.0 nC gs GS b, d see fig. 6 and 13 Gate-Drain Charge Q --18 gd Turn-On Delay Time t -11 - d(on) Rise Time t -23 - r V = 250 V, I = 8.0 A, DD D ns b, d R = 9.1 , R = 31 , see fig. 10 g D Turn-Off Delay Time t -26- d(off) Fall Time t -19- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 8.0 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 32 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 8.0 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 422 633 ns rr b T = 25 C, I = 8.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.0 3.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 %to 80 % V . oss oss DS DS d. Uses IRF840A, SiHF840A data and test conditions www.vishay.com Document Number: 91066 2 S11-1050-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000