X-On Electronics has gained recognition as a prominent supplier of IRF830LPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF830LPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF830LPBF Vishay

IRF830LPBF electronic component of Vishay
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See Product Specifications
Part No.IRF830LPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 500V 4.5 Amp
Datasheet: IRF830LPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1.557 ea
Line Total: USD 77.85 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 1.557
200 : USD 1.4994
500 : USD 1.4418
1250 : USD 1.4418
2000 : USD 1.4418

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the IRF830LPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830LPBF and other electronic components in the MOSFETs category and beyond.

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IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 500 DS Available Repetitive Avalanche Rated R ( )V = 10 V 1.5 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 38 COMPLIANT g Ease of Paralleling Q (nC) 5.0 gs Q (nC) 22 Simple Drive Requirements gd Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.9 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 280 mJ AS a Repetitive Avalanche Current I 4.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 24 mH, R = 25 , I = 4.5 A (see fig. 12). DD J g AS c. I 4.5 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91063 www.vishay.com S11-0506-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF830, SiHF830 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 2.7 A -- DS(on) GS D 1.5 b Forward Transconductance g V = 50 V, I = 2.7 A 2.5 - - fs DS D S Dynamic V = 0 V, Input Capacitance C -610 - GS iss Output Capacitance C -1V = 25 V, 60- pF oss DS Reverse Transfer Capacitance C -68- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 38 g I = 3.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 5.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -8.2 - d(on) Rise Time t -16 - r V = 250 V, I = 3.1 A DD D ns Turn-Off Delay Time t -42- d(off) b R = 12 , R = 79, see fig. 10 g D Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 18 SM p - n junction diode S b Body Diode Voltage V -- SD T = 25 C, I = 4.5 A, V = 0 V 1.6 V J S GS Body Diode Reverse Recovery Time t - rr 320 640 ns b T = 25 C, I = 3.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 1.0 2.0 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91063 2 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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