X-On Electronics has gained recognition as a prominent supplier of IRF7905TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7905TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7905TRPBF Infineon

IRF7905TRPBF electronic component of Infineon
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Part No.IRF7905TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT DUAL NCh 30V 8.9A
Datasheet: IRF7905TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8921 ea
Line Total: USD 0.89 
Availability - 1356
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0342
10 : USD 1.0114
30 : USD 0.9962
100 : USD 0.9809

1356
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8921
10 : USD 0.7876
2000 : USD 0.5027
4000 : USD 0.4378

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the IRF7905TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7905TRPBF and other electronic components in the MOSFETs category and beyond.

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IRF7905PbF HEXFET Power MOSFET Applications V R max I Dual SO-8 MOSFET for POL DSS D DS(on) Converters in Notebook Computers, Servers, 30V Q1 21.8m V = 10V 7.8A GS Graphics Cards, Game Consoles and Set-Top Box V = 10V 8.9A Q2 17.1m GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 7.8 8.9 D A GS I T = 70C Continuous Drain Current, V 10V 6.2 7.1 A D A GS Pulsed Drain Current I 62 71 DM P T = 25C Power Dissipation 2.0 2.0 W D A P T = 70C Power Dissipation 1.3 1.3 D A Linear Derating Factor 0.016 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 42 42 C/W JL R Junction-to-Ambient 62.5 62.5 JA www.irf.com 1 07/09/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.024 V/C D DSS J Q2 0.024 V = 10V, I = 7.8A Q1 17.4 21.8 GS D V = 4.5V, I = 6.2A R Static Drain-to-Source On-Resistance 23.4 29.3 m GS D DS(on) V = 10V, I = 8.9A Q2 13.7 17.1 GS D 17.1 21.3 V = 4.5V, I = 7.1A GS D V = V , I = 25A V Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient Q1 -5.0 mV/C GS(th) J Q2 -5.0 I Drain-to-Source Leakage Current Q1&Q2 1.0 A V = 24V, V = 0V DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 6.2A gfs Forward Transconductance Q1 15 S DS D Q2 18 V = 15V, I = 7.1A DS D Q Total Gate Charge Q1 4.6 6.9 g Q2 6.9 10 Pre-Vth Gate-to-Source Charge Q1 0.9 Q1 Q gs1 Q2 1.5 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.6 nC V = 4.5V, I = 6.2A gs2 GS D Q2 0.8 Q Gate-to-Drain Charge Q1 1.7 Q2 gd Q2 2.5 V = 15V DS Q Gate Charge Overdrive Q1 1.4 V = 4.5V, I = 7.1A godr GS D Q2 2.1 Q Switch Charge (Q + Q ) Q1 2.3 sw gs2 gd Q2 3.3 V = 16V, V = 0V Q Output Charge Q1 2.9 nC oss DS GS Q2 4.5 R Gate Resistance Q1 3.1 4.9 G Q2 3.1 4.9 t Turn-On Delay Time Q1 5.2 Q1 d(on) V = 15V, V = 4.5V Q2 6.2 DD GS t Rise Time Q1 8.3 I = 6.2A r D Q2 9.3 ns t Turn-Off Delay Time Q1 6.9 Q2 d(off) V = 15V, V = 4.5V Q2 8.1 DD GS t Fall Time Q1 3.4 I = 7.1A f D Q2 3.4 Clamped Inductive Load C Input Capacitance Q1 600 iss V = 0V Q2 910 GS V = 15V C Output Capacitance Q1 130 pF DS oss Q2 190 = 1.0MHz C Reverse Transfer Capacitance Q1 78 rss Q2 95 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 12 18 mJ AS I Avalanche Current 6.2 7.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 2.8 A MOSFET symbol S (Body Diode) Q2 2.8 showing the I Pulsed Source Current Q1 62 A integral reverse SM (Body Diode) Q2 71 p-n junction diode. V Diode Forward Voltage Q1 1.0 V T = 25C, I = 6.1A, V = 0V J S GS SD T = 25C, I = 7.1A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 6.2A, t Reverse Recovery Time Q1 10 15 ns J F rr V = 15V, di/dt = 100A/s Q2 13 20 DD Q Reverse Recovery Charge Q1 2.5 3.8 nC Q2 T = 25C, I = 7.1A, J F rr V = 15V, di/dt = 100A/s Q2 4.0 6.0 DD 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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