IRF7905TRPBF Infineon

IRF7905PbF HEXFET Power MOSFET Applications V R max I Dual SO-8 MOSFET for POL DSS D DS(on) Converters in Notebook Computers, Servers, 30V Q1 21.8m V = 10V 7.8A GS Graphics Cards, Game Consoles and Set-Top Box V = 10V 8.9A Q2 17.1m GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 7.8 8.9 D A GS I T = 70C Continuous Drain Current, V 10V 6.2 7.1 A D A GS Pulsed Drain Current I 62 71 DM P T = 25C Power Dissipation 2.0 2.0 W D A P T = 70C Power Dissipation 1.3 1.3 D A Linear Derating Factor 0.016 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 42 42 C/W JL R Junction-to-Ambient 62.5 62.5 JA www.irf.com 1 07/09/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.024 V/C D DSS J Q2 0.024 V = 10V, I = 7.8A Q1 17.4 21.8 GS D V = 4.5V, I = 6.2A R Static Drain-to-Source On-Resistance 23.4 29.3 m GS D DS(on) V = 10V, I = 8.9A Q2 13.7 17.1 GS D 17.1 21.3 V = 4.5V, I = 7.1A GS D V = V , I = 25A V Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient Q1 -5.0 mV/C GS(th) J Q2 -5.0 I Drain-to-Source Leakage Current Q1&Q2 1.0 A V = 24V, V = 0V DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 6.2A gfs Forward Transconductance Q1 15 S DS D Q2 18 V = 15V, I = 7.1A DS D Q Total Gate Charge Q1 4.6 6.9 g Q2 6.9 10 Pre-Vth Gate-to-Source Charge Q1 0.9 Q1 Q gs1 Q2 1.5 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.6 nC V = 4.5V, I = 6.2A gs2 GS D Q2 0.8 Q Gate-to-Drain Charge Q1 1.7 Q2 gd Q2 2.5 V = 15V DS Q Gate Charge Overdrive Q1 1.4 V = 4.5V, I = 7.1A godr GS D Q2 2.1 Q Switch Charge (Q + Q ) Q1 2.3 sw gs2 gd Q2 3.3 V = 16V, V = 0V Q Output Charge Q1 2.9 nC oss DS GS Q2 4.5 R Gate Resistance Q1 3.1 4.9 G Q2 3.1 4.9 t Turn-On Delay Time Q1 5.2 Q1 d(on) V = 15V, V = 4.5V Q2 6.2 DD GS t Rise Time Q1 8.3 I = 6.2A r D Q2 9.3 ns t Turn-Off Delay Time Q1 6.9 Q2 d(off) V = 15V, V = 4.5V Q2 8.1 DD GS t Fall Time Q1 3.4 I = 7.1A f D Q2 3.4 Clamped Inductive Load C Input Capacitance Q1 600 iss V = 0V Q2 910 GS V = 15V C Output Capacitance Q1 130 pF DS oss Q2 190 = 1.0MHz C Reverse Transfer Capacitance Q1 78 rss Q2 95 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 12 18 mJ AS I Avalanche Current 6.2 7.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 2.8 A MOSFET symbol S (Body Diode) Q2 2.8 showing the I Pulsed Source Current Q1 62 A integral reverse SM (Body Diode) Q2 71 p-n junction diode. V Diode Forward Voltage Q1 1.0 V T = 25C, I = 6.1A, V = 0V J S GS SD T = 25C, I = 7.1A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 6.2A, t Reverse Recovery Time Q1 10 15 ns J F rr V = 15V, di/dt = 100A/s Q2 13 20 DD Q Reverse Recovery Charge Q1 2.5 3.8 nC Q2 T = 25C, I = 7.1A, J F rr V = 15V, di/dt = 100A/s Q2 4.0 6.0 DD 2 www.irf.com