IRF8252PbF Applications HEXFET Power MOSFET Synchronous MOSFET for Notebook V R max Processor Power Qg DSS DS(on) Synchronous Rectifier MOSFET for 2.7m V = 10V 25V 35nC Isolated DC-DC Converters GS Benefits Very Low Gate Charge A A 1 8 Very Low R at 4.5V V S D DS(on) GS Ultra-Low Gate Impedance 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D 20V V Max. Gate Rating GS 100% tested for Rg SO-8 Top View RoHS Compliant (Halogen Free) Low Thermal Resistance Description The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 25 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 25 A GS D I T = 70C Continuous Drain Current, V 10V A GS 20 A D Pulsed Drain Current I 200 DM P T = 25C Power Dissipation 2.5 A D W P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 07/07/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.018 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 2.0 2.7 V = 10V, I = 25A GS D m 2.9 3.7 V = 4.5V, I = 20A GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 100A DS GS D V GS(th) Gate Threshold Voltage Coefficient -6.67 mV/C V = V , I = 100A DS GS D I Drain-to-Source Leakage Current 1.0 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 89 S V = 13V, I = 20A DS D Q g Total Gate Charge 35 53 Q gs1 Pre-Vth Gate-to-Source Charge 10 V = 13V DS Q gs2 Post-Vth Gate-to-Source Charge 4.6 V = 4.5V GS nC Q Gate-to-Drain Charge 12 I = 20A gd D Q Gate Charge Overdrive 8.9 See Figs. 15 & 16 godr Q Switch Charge (Q + Q ) 16 sw gs2 gd Q oss Output Charge 26 nC V = 16V, V = 0V DS GS R g Gate Resistance 0.61 1.22 t d(on) Turn-On Delay Time 23 V = 13V, V = 4.5V DD GS t r Rise Time 32 I = 20A D ns t d(off) Turn-Off Delay Time 19 R = 1.8 G t Fall Time 12 f See Fig. 18 C Input Capacitance 5305 V = 0V iss GS C Output Capacitance 1340 V = 13V oss pF DS C rss Reverse Transfer Capacitance 725 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 231 mJ Avalanche Current I AR 20 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3.1 A (Body Diode) showing the G I Pulsed Source Current integral reverse SM 200 A S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t rr Reverse Recovery Time 19 29 ns T = 25C, I = 20A, V = 13V J F DD Q di/dt = 230A/s rr Reverse Recovery Charge 12 18 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com