IRF7902PbF HEXFET Power MOSFET Applications V I R max DSS D Dual SO-8 MOSFET for POL DS(on) Converters in Notebook Computers, Servers, 22.6m V = 10V 30V Q1 6.4A GS Graphics Cards, Game Consoles Q2 14.4m V = 10V 9.7A and Set-Top Box GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 6.4 9.7 D A GS I T = 70C Continuous Drain Current, V 10V 5.1 7.8 A D A GS Pulsed Drain Current I 51 78 DM P T = 25C Power Dissipation 1.4 2.0 W D A P T = 70C Power Dissipation 0.9 1.3 D A Linear Derating Factor 0.011 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 20 20 C/W JL R Junction-to-Ambient 90 62.5 JA www.irf.com 1 07/10/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.023 V/C D DSS J Q2 0.025 V = 10V, I = 6.4A Q1 18.1 22.6 GS D R V = 4.5V, I = 5.1A Static Drain-to-Source On-Resistance 23.8 29.7 m GS D DS(on) V = 10V, I = 9.7A Q2 11.5 14.4 GS D V = 4.5V, I = 7.8A 14.9 18.7 GS D V = V , I = 25A V Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient Q1 -4.7 mV/C GS(th) J Q2 -5.9 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 5.1A gfs Forward Transconductance Q1 13 S DS D V = 15V, I = 7.8A Q2 19 DS D Q Total Gate Charge Q1 4.6 6.9 g Q2 6.5 9.8 Q Pre-Vth Gate-to-Source Charge Q1 0.9 Q1 gs1 Q2 1.4 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.5 nC V = 4.5V, I = 5.1A gs2 GS D Q2 0.8 Q Gate-to-Drain Charge Q1 1.8 Q2 gd Q2 2.3 V = 15V DS Q Gate Charge Overdrive Q1 1.4 V = 4.5V, I = 7.8A godr GS D Q2 2.0 Q Switch Charge (Q + Q ) Q1 2.3 sw gs2 gd Q2 3.1 V = 16V, V = 0V Q Output Charge Q1 3.0 nC DS GS oss Q2 4.4 R Gate Resistance Q1 3.1 4.9 G Q2 3.1 4.9 t Turn-On Delay Time Q1 7.4 Q1 d(on) V = 15V, V = 4.5V Q2 6.1 DD GS t Rise Time Q1 8.2 I = 5.1A r D Q2 8.6 ns t Turn-Off Delay Time Q1 8.4 Q2 d(off) V = 15V, V = 4.5V Q2 8.2 DD GS t Fall Time Q1 3.4 I = 7.8A f D Q2 3.3 Clamped Inductive Load C Input Capacitance Q1 580 iss V = 0V Q2 900 GS V = 15V C Output Capacitance Q1 130 pF DS oss Q2 190 = 1.0MHz C Reverse Transfer Capacitance Q1 74 rss Q2 86 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 3.4 7.3 mJ AS I Avalanche Current 5.1 7.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 1.7 A MOSFET symbol S (Body Diode) Q2 2.5 showing the I Pulsed Source Current Q1 51 A integral reverse SM (Body Diode) Q2 78 p-n junction diode. T = 25C, I = 5.1A, V = 0V V Diode Forward Voltage Q1 1.0 V J S GS SD T = 25C, I = 7.8A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 5.1A, t Reverse Recovery Time Q1 7.8 12 ns J F rr V = 15V, di/dt = 100A/s Q2 12 18 DD Q2 T = 25C, I = 7.8A, Q Reverse Recovery Charge Q1 1.5 2.3 nC J F rr V = 15V, di/dt = 100A/s Q2 3.1 4.7 DD 2 www.irf.com