X-On Electronics has gained recognition as a prominent supplier of IRF7902TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7902TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7902TRPBF Infineon

IRF7902TRPBF electronic component of Infineon
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Part No.IRF7902TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 30V 6.4A, 9.7A 1.4W, 2W Surface Mount 8-SO
Datasheet: IRF7902TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1191: USD 0.2738 ea
Line Total: USD 326.1 
Availability - 0
MOQ: 1191  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.5347

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5295
10 : USD 1.3541
100 : USD 1.0856
500 : USD 0.8579
1000 : USD 0.6924

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1191
Multiples : 1
1191 : USD 0.2738

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.4163

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.3883

   
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We are delighted to provide the IRF7902TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7902TRPBF and other electronic components in the MOSFETs category and beyond.

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IRF7902PbF HEXFET Power MOSFET Applications V I R max DSS D Dual SO-8 MOSFET for POL DS(on) Converters in Notebook Computers, Servers, 22.6m V = 10V 30V Q1 6.4A GS Graphics Cards, Game Consoles Q2 14.4m V = 10V 9.7A and Set-Top Box GS Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS Improved Body Diode Reverse Recovery SO-8 Lead-Free Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 6.4 9.7 D A GS I T = 70C Continuous Drain Current, V 10V 5.1 7.8 A D A GS Pulsed Drain Current I 51 78 DM P T = 25C Power Dissipation 1.4 2.0 W D A P T = 70C Power Dissipation 0.9 1.3 D A Linear Derating Factor 0.011 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Q1 Max. Q2 Max. Units Junction-to-Drain Lead R 20 20 C/W JL R Junction-to-Ambient 90 62.5 JA www.irf.com 1 07/10/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient Q1 0.023 V/C D DSS J Q2 0.025 V = 10V, I = 6.4A Q1 18.1 22.6 GS D R V = 4.5V, I = 5.1A Static Drain-to-Source On-Resistance 23.8 29.7 m GS D DS(on) V = 10V, I = 9.7A Q2 11.5 14.4 GS D V = 4.5V, I = 7.8A 14.9 18.7 GS D V = V , I = 25A V Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient Q1 -4.7 mV/C GS(th) J Q2 -5.9 V = 24V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C Q1&Q2 150 DS GS J V = 20V I Gate-to-Source Forward Leakage Q1&Q2 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage Q1&Q2 -100 GS V = 15V, I = 5.1A gfs Forward Transconductance Q1 13 S DS D V = 15V, I = 7.8A Q2 19 DS D Q Total Gate Charge Q1 4.6 6.9 g Q2 6.5 9.8 Q Pre-Vth Gate-to-Source Charge Q1 0.9 Q1 gs1 Q2 1.4 V = 15V DS Q Post-Vth Gate-to-Source Charge Q1 0.5 nC V = 4.5V, I = 5.1A gs2 GS D Q2 0.8 Q Gate-to-Drain Charge Q1 1.8 Q2 gd Q2 2.3 V = 15V DS Q Gate Charge Overdrive Q1 1.4 V = 4.5V, I = 7.8A godr GS D Q2 2.0 Q Switch Charge (Q + Q ) Q1 2.3 sw gs2 gd Q2 3.1 V = 16V, V = 0V Q Output Charge Q1 3.0 nC DS GS oss Q2 4.4 R Gate Resistance Q1 3.1 4.9 G Q2 3.1 4.9 t Turn-On Delay Time Q1 7.4 Q1 d(on) V = 15V, V = 4.5V Q2 6.1 DD GS t Rise Time Q1 8.2 I = 5.1A r D Q2 8.6 ns t Turn-Off Delay Time Q1 8.4 Q2 d(off) V = 15V, V = 4.5V Q2 8.2 DD GS t Fall Time Q1 3.4 I = 7.8A f D Q2 3.3 Clamped Inductive Load C Input Capacitance Q1 580 iss V = 0V Q2 900 GS V = 15V C Output Capacitance Q1 130 pF DS oss Q2 190 = 1.0MHz C Reverse Transfer Capacitance Q1 74 rss Q2 86 Avalanche Characteristics Parameter Typ. Q1 Max. Q2 Max. Units E Single Pulse Avalanche Energy 3.4 7.3 mJ AS I Avalanche Current 5.1 7.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current Q1 1.7 A MOSFET symbol S (Body Diode) Q2 2.5 showing the I Pulsed Source Current Q1 51 A integral reverse SM (Body Diode) Q2 78 p-n junction diode. T = 25C, I = 5.1A, V = 0V V Diode Forward Voltage Q1 1.0 V J S GS SD T = 25C, I = 7.8A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 5.1A, t Reverse Recovery Time Q1 7.8 12 ns J F rr V = 15V, di/dt = 100A/s Q2 12 18 DD Q2 T = 25C, I = 7.8A, Q Reverse Recovery Charge Q1 1.5 2.3 nC J F rr V = 15V, di/dt = 100A/s Q2 3.1 4.7 DD 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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