IRF840, SiHF840
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
V (V) 500
DS
Available
Repetitive Avalanche Rated
R ()V = 10 V 0.85
DS(on) GS
RoHS*
Fast Switching
Q (Max.) (nC) 63
COMPLIANT
g
Ease of Paralleling
Q (nC) 9.3
gs
Q (nC) 32 Simple Drive Requirements
gd
Configuration Single
Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
S
D
levels to approximately 50 W. The low thermal resistance
S
G
and low package cost of the TO-220AB contribute to its
N-Channel MOSFET
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRF840PbF
Lead (Pb)-free
SiHF840-E3
IRF840
SnPb
SiHF840
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 500 V
DS
Gate-Source Voltage V 20 V
GS
T = 25 C 8.0
C
Continuous Drain Current V at 10 V I
GS D
T = 100 C 5.1 A
C
a
Pulsed Drain Current I 32
DM
Linear Derating Factor 1.0 W/C
b
Single Pulse Avalanche Energy E 510 mJ
AS
a
Repetitive Avalanche Current I 8.0 A
AR
a
Repetitive Avalanche Energy E 13 mJ
AR
Maximum Power Dissipation T = 25 C P 125 W
C D
c
Peak Diode Recovery dV/dt dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 150
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 N m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = 50 V, starting T = 25 C, L = 14 mH, R = 25 , I = 8.0 A (see fig. 12).
DD J g AS
c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91070 www.vishay.com
S11-0506-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF840, SiHF840
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -62
thJA
Case-to-Sink, Flat, Greased Surface R 0.50 - C/W
thCS
Maximum Junction-to-Case (Drain) R -1.0
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - -
DS GS D V
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.78 -
DS DS J D V/C
Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 -
GS(th) DS GS D 4.0 V
Gate-Source Leakage I V = 20 V - -
100 nA
GSS GS
V = 500 V, V = 0 V - -
25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 400 V, V = 0 V, T = 125 C - -
DS GS J 250
b
Drain-Source On-State Resistance R V = 10 V I = 4.8 A --
DS(on) GS D 0.85
b
Forward Transconductance g V = 50 V, I = 4.8 A 4.9 - -
fs DS D S
Dynamic
V = 0 V,
Input Capacitance C - 1300 -
GS
iss
Output Capacitance C -V = 25 V, 310- pF
oss DS
Reverse Transfer Capacitance C -120-
f = 1.0 MHz, see fig. 5
rss
Total Gate Charge Q -- 63
g
I = 8 A, V = 400 V,
D DS
Gate-Source Charge Q --V = 10 V 9.3 nC
gs GS
b
see fig. 6 and 13
Gate-Drain Charge Q --32
gd
Turn-On Delay Time t -14 -
d(on)
Rise Time t -23 -
r V = 250 V, I = 8 A
DD D
ns
b
R = 9.1 , R = 31 , see fig. 10
g D
Turn-Off Delay Time t -49-
d(off)
Fall Time t -20-
f
D
Between lead,
Internal Drain Inductance L -4.5 -
D
6 mm (0.25") from
nH
G
package and center of
Internal Source Inductance L -7.5 -
S
die contact
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 8.0
S
showing the
A
G
integral reverse
a
Pulsed Diode Forward Current I -- 32
SM
S
p - n junction diode
b
Body Diode Voltage V --
SD T = 25 C, I = 8 A, V = 0 V 2.0 V
J S GS
Body Diode Reverse Recovery Time t -
rr 460 970 ns
b
T = 25 C, I = 8 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q -
rr 4.2 8.9 C
Forward Turn-On Time t
on Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91070
2 S11-0506-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000