X-On Electronics has gained recognition as a prominent supplier of IRF8910GTRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8910GTRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF8910GTRPBF Infineon

IRF8910GTRPBF electronic component of Infineon
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Part No.IRF8910GTRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT DUAL NCh 20V 10A
Datasheet: IRF8910GTRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0245
10 : USD 0.881
100 : USD 0.6762
500 : USD 0.5978
1000 : USD 0.4712
4000 : USD 0.4182
8000 : USD 0.4013
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF8910GTRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8910GTRPBF and other electronic components in the MOSFETs category and beyond.

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IRF8910GPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Dual SO-8 MOSFET for POL converters in desktop, servers, 13.4m V = 10V 20V 10A GS graphics cards, game consoles and set-top box Lead-Free Halogen-Free 1 8 S1 D1 2 7 G1 D1 Benefits 3 6 S2 D2 Very Low R at 4.5V V DS(on) GS 4 5 G2 D2 Ultra-Low Gate Impedance SO-8 Fully Characterized Avalanche Voltage Top View and Current 20V V Max. Gate Rating GS Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 10 D A Continuous Drain Current, V 10V I T = 70C GS 8.3 A D A Pulsed Drain Current I 82 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C Power Dissipation 1.3 A D Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 42 C/W R JA 62.5 Junction-to-Ambient Notes through are on page 10 www.irf.com 1 7/10/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.015 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 10.7 13.4 V = 10V, I = 10A m GS D 14.6 18.3 V = 4.5V, I = 8.0A GS D V Gate Threshold Voltage 1.65 2.55 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -4.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 24 S V = 10V, I = 8.2A DS D Q g Total Gate Charge 7.4 11 Q gs1 Pre-Vth Gate-to-Source Charge 2.4 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 0.80 nC V = 4.5V GS Q Gate-to-Drain Charge 2.5 I = 8.2A gd D Q Gate Charge Overdrive 1.7 See Fig. 6 godr Q Switch Charge (Q + Q ) 3.3 sw gs2 gd Q oss Output Charge 4.4 nC V = 10V, V = 0V DS GS t d(on) Turn-On Delay Time 6.2 V = 10V, V = 4.5V DD GS t r Rise Time 10 ns I = 8.2A D t d(off) Turn-Off Delay Time 9.7 Clamped Inductive Load t f Fall Time 4.1 C Input Capacitance 960 V = 0V iss GS C Output Capacitance 300 pF V = 10V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 19 mJ Avalanche Current I AR 8.2 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 2.5 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 82 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 8.2A, V = 0V J S GS t rr Reverse Recovery Time 17 26 ns T = 25C, I = 8.2A, V = 10V J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 6.5 9.7 nC 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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