PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) Synchronous MOSFET for Notebook 3.5m V = 10V 30V 20nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V 30 Drain-to-Source Voltage DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 21 I T = 25C GS D A Continuous Drain Current, V 10V 17 A I T = 70C A GS D I Pulsed Drain Current 168 DM 2.5 P T = 25C Power Dissipation D A W 1.6 P T = 70C Power Dissipation A D Linear Derating Factor 0.02 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Notes through are on page 10 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 2/12/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.023 V/C DSS J D R V = 10V, I = 21A DS(on) 2.9 3.5 GS D Static Drain-to-Source On-Resistance m V = 4.5V, I = 17A 4.2 5.1 GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 50A DS GS D V Gate Threshold Voltage Coefficient -6.5 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 GS GSS nA V = -20V Gate-to-Source Reverse Leakage -100 GS gfs Forward Transconductance 85 S V = 15V, I = 17A DS D Q Total Gate Charge 20 30 g Q V = 15V gs1 Pre-Vth Gate-to-Source Charge 5.2 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 2.3 GS gs2 nC Q I = 17A Gate-to-Drain Charge 6.9 D gd Q Gate Charge Overdrive 5.4 See Figs. 16a &16b godr Q Switch Charge (Q + Q ) 9.2 sw gs2 gd V = 16V, V = 0V Q Output Charge 15 nC oss DS GS R Gate Resistance 1.7 3.1 G V = 15V, V = 4.5V t Turn-On Delay Time 13 d(on) DD GS t I = 17A r Rise Time 16 D ns t R = 1.8 Turn-Off Delay Time 15 G d(off) t See Figs. 15a &15b Fall Time 8.0 f C V = 0V Input Capacitance 3175 GS iss V = 15V C Output Capacitance 627 pF DS oss C Reverse Transfer Capacitance 241 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 216 mJ AS I Avalanche Current 17 A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current S 3.1 showing the (Body Diode) A I Pulsed Source Current integral reverse SM 168 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 17A, V = 15V rr DD J F Q di/dt = 345A/s rr Reverse Recovery Charge 25 38 nC 2 www.irf.com