IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 500 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.85 Enhanced 30 V V Rating DS(on) GS GS RoHS* COMPLIANT Reduced C , C , C Q (Max.) (nC) 39 iss oss rss g Extremely High Frequency Operation Q (nC) 10 gs Repetitive Avalanche Rated Q (nC) 19 gd Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D This new series of low charge Power MOSFETs achieve TO-220AB signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total G system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D current are possible using the new low charge MOSFETs. G S These device improvements combined with the proven N-Channel MOSFET ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package TO-220AB IRF840LCPbF Lead (Pb)-free SiHF840LC-E3 IRF840LC SnPb SiHF840LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 8.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.1 A C a Pulsed Drain Current I 28 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 510 mJ AS a Repetitive Avalanche Current I 8.0 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c dV/dt 3.5 V/ns Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 14 mH, R = 25 , I = 8.0 A (see fig. 12). DD J g AS c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91067 www.vishay.com S11-0506-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF840LC, SiHF840LC Vishay Siliconix THERMAL RESISTANCE PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V /T -0.63 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 4.8 A - - 0.85 DS(on) GS D b Forward Transconductance g V = 50 V, I = 4.8 A 4.0 - - S fs DS D Dynamic Input Capacitance C -1100 - iss V = 0 V, GS Output Capacitance C -1V = 25 V, 70- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 39 g I = 8.0 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -12 - d(on) Rise Time t V = 250 V, I = 8.0 A, -25 - r DD D ns R = 9.1 , R = 30 g D Turn-Off Delay Time t -27- d(off) b see fig. 10 Fall Time t -19- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 8.0 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 28 S SM b Body Diode Voltage V T = 25 C, I = 8.0 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 490 740 ns rr T = 25 C, I = 8.0 A, J F b dI/dt = 100 A/s Body Diode Reverse Recovery Charge Q -3.0 4.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91067 2 S11-0506-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000