IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G %& 3 Power-Transistor Product Summary Features V )*( K I R ( 492 6= C>2 = =6G6= R ),&/ - >2 I R I46==6 E 82 E6 492 C86 I R AC 5F4E ) I -. 7 R /6CJ = H C6D:DE2 46 R R U A6C2 E: 8 E6>A6C2 EFC6 R *3 7C66 =62 5 A=2 E: 8 , - 4 >A=:2 E ) R + F2 =:7:65 2 44 C5: 8 E % 7 C E2 C86E 2 AA=:42 E: R 562 = 7 C 9:89 7C6BF6 4J DH:E49: 8 2 5 DJ 49C FD C64E:7:42 E: R 2 = 86 7C66 2 44 C5: 8 E Type * ( ( * ( ( ** ( ( Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+ Marking ),,D)*D ),/D)*D ),/D)*D Maximum ratings, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Value Parameter Symbol Conditions Unit T U 7 I E: F FD 5C2 : 4FCC6 E -. 7 R & 0 aUA7 T U ,) 9 I V / I * I Qi Qt W D **, *F=D65 5C2 : 4FCC6 E bY R T U W ZNe E I R G2 =2 496 6 6C8J D: 8=6 AF=D6 1( ZA 7I >I + V 2 E6 D FC46 G =E2 86 r*( K >I P T U * H6C 5:DD:A2 E: )(/ L a a 9 T T ) A6C2 E: 8 2 5 DE C2 86 E6>A6C2 EFC6 U W aT 4=:>2 E:4 42 E68 CJ ( ) % -. 2 5 % - * D66 7:8FC6 J U 2 5 5FEJ 4J4=6 7 C /8D / WZNe , 6G A2 86 IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics .96C>2 = C6D:DE2 46 F 4E: 42 D6 R % % )&, B L aUA9 R >: :>2 = 7 EAC: E aUA7 .96C>2 = C6D:DE2 46 F 4E: 2 >3 :6 E , % % ,( 4> 4 =: 8 2 C62 Electrical characteristics, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Static characteristics V V / I > C2 : D FC46 3 C62 <5 H G =E2 86 )*( % % K8H II >I V V 5V I W 2 E6 E9C6D9 =5 G =E2 86 * + , >aU I >I V / V / I >I 16C 82 E6 G =E2 86 5C2 : 4FCC6 E I % (&) ) s7 II T U W V / V / I >I % )( )(( T U W I V / V / 2 E6 D FC46 =62 <2 86 4FCC6 E % ) )(( 7 >II >I I V / I >I R C2 : D FC46 DE2 E6 C6D:DE2 46 % )*&+ ),&, JE*.+ V / I >I % )*&. ),&/ .) .) 2 E6 C6D:DE2 46 R % )&* % > hV h6*hI hR I ZNe g J N P QbPaN PR +) .* % I S I , * 6G:46 >> I >> I >> 6A IJ * , H:E9 4> 6 =2 J6C W > E9:4< 4 AA6C 2 C62 7 C 5C2 : 4 64E: * :D G6CE:42 = : DE:== 2 :C , 6G A2 86