IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 100 Definition DS Surface Mount R ( )V = - 10 V 1.2 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 8.7 g Dynamic dV/dt Rating Q (nC) 2.2 gs Repetitive Avalanche Rated P-Channel Q (nC) 4.1 gd 175 C Operating Temperature Configuration Single Fast Switching Compliant to RoHS Directive 2002/95/EC S 2 DESCRIPTION D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D G the highest power capability and the lowest possible D S on-resistance in any existing surface mount package. The 2 P-Channel MOSFET D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF9510S-GE3 SiHF9510STRL-GE3 a IRF9510SPbF IRF9510STRLPbF Lead (Pb)-free a SiHF9510S-E3 SiHF9510STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.0 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 2.8 A C a Pulsed Drain Current I - 16 DM Linear Derating Factor 0.29 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 200 mJ AS a Avalanche Current I - 4.0 A AR a Repetiitive Avalanche Energy E 4.3 mJ AR = 25 C 43 Maximum Power Dissipation T C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 18 mH, R = 25 , I = - 4.0 A (see fig. 12). DD J g AS c. I - 4.0 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9510S, SiHF9510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.091 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 100 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 2.4 A -- 1.2 DS(on) GS D b Forward Transconductance g V = - 50 V, I = - 2.4 A 1.0 - - S fs DS D Dynamic Input Capacitance C - 200 - iss V = 0 V, GS Output Capacitance C -9V = - 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 8.7 g I = - 4.0 A, V = - 80 V, D DS Gate-Source Charge Q --V = - 10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.1 gd Turn-On Delay Time t -10 - d(on) Rise Time t -27 - r V = - 50 V, I = - 4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 4.0 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 16 SM S b Body Diode Voltage V T = 25 C, I = - 4.0 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t - 82 160 ns rr b T = 25 C, I = - 4.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.15 0.30 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91073 2 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000