IRF9388PbF HEXFET Power MOSFET V -30 V DS V 25 V GS max R DS(on) max 11.9 m ( V = -10V) GS I D -12 A ( T = 25C) A SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V V max Direct Drive at High V GS GS Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type Standard Pack Note Form Quantity IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V Gate-to-Source Voltage 25 V GS Continuous Drain Current, V 10V -12 I T = 25C GS D A -9.6 A I T = 70C Continuous Drain Current, V 10V A GS D I Pulsed Drain Current -96 DM P T = 25C Power Dissipation 2.5 D A W 1.6 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 6/4/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250 A BV Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -20V, I = -12A R 8.5 GS D DS(on) m Static Drain-to-Source On-Resistance V = -10V, I = -12A 10 11.9 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25 A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -25V I Gate-to-Source Forward Leakage 10 GS GSS A V = 25V Gate-to-Source Reverse Leakage 10 GS V = -10V, I = -9.6A gfs Forward Transconductance 20 S DS D Q Total Gate Charge 18 nC V = -15V, V = -4.5V, I = - 9.6A g DS GS D V = -10V Q Total Gate Charge 35 52 g GS V = -15V Q Gate-to-Source Charge 5.3 nC gs DS I = -9.6A Q Gate-to-Drain Charge 8.5 gd D R Gate Resistance 15 G V = -15V, V = -4.5V t Turn-On Delay Time 19 d(on) DD GS I = -1.0A t Rise Time 57 r D ns R = 6.8 t Turn-Off Delay Time 80 d(off) G t Fall Time 66 See Figs. 20a &20b f C Input Capacitance 1680 V = 0V iss GS C Output Capacitance 350 pF V = -25V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E 120 Single Pulse Avalanche Energy mJ AS I -9.6 Avalanche Current A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current MOSFET symbol D S -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -96 S (Body Diode) p-n junction diode. V T = 25C, I = -2.5A, V = 0V Diode Forward Voltage -1.2 V SD J S GS t Reverse Recovery Time 51 76 ns T = 25C, I = -2.5A, V = -24V rr J F DD Q Reverse Recovery Charge 35 53 nC di/dt = 100A/s rr Thermal Resistance Typ. Max. Parameter Units R 20 Junction-to-Drain Lead JL C/W R 50 Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 2.6mH, R = 25, I = -9.6A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com