X-On Electronics has gained recognition as a prominent supplier of IRF9388PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9388PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9388PBF Infineon

IRF9388PBF electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.IRF9388PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET P-CH 30V 12A 8-Pin SOIC Tube
Datasheet: IRF9388PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
190: USD 0.3701 ea
Line Total: USD 70.32 
Availability - 0
MOQ: 190  Multiples: 95
Pack Size: 95
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 190
Multiples : 95
190 : USD 0.3701

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the IRF9388PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9388PBF and other electronic components in the MOSFETs category and beyond.

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IRF9388PbF HEXFET Power MOSFET V -30 V DS V 25 V GS max R DS(on) max 11.9 m ( V = -10V) GS I D -12 A ( T = 25C) A SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V V max Direct Drive at High V GS GS Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type Standard Pack Note Form Quantity IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -30 DS V Gate-to-Source Voltage 25 V GS Continuous Drain Current, V 10V -12 I T = 25C GS D A -9.6 A I T = 70C Continuous Drain Current, V 10V A GS D I Pulsed Drain Current -96 DM P T = 25C Power Dissipation 2.5 D A W 1.6 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 6/4/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250 A BV Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V /T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -20V, I = -12A R 8.5 GS D DS(on) m Static Drain-to-Source On-Resistance V = -10V, I = -12A 10 11.9 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V GS(th) V = V , I = -25 A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) V = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J V = -25V I Gate-to-Source Forward Leakage 10 GS GSS A V = 25V Gate-to-Source Reverse Leakage 10 GS V = -10V, I = -9.6A gfs Forward Transconductance 20 S DS D Q Total Gate Charge 18 nC V = -15V, V = -4.5V, I = - 9.6A g DS GS D V = -10V Q Total Gate Charge 35 52 g GS V = -15V Q Gate-to-Source Charge 5.3 nC gs DS I = -9.6A Q Gate-to-Drain Charge 8.5 gd D R Gate Resistance 15 G V = -15V, V = -4.5V t Turn-On Delay Time 19 d(on) DD GS I = -1.0A t Rise Time 57 r D ns R = 6.8 t Turn-Off Delay Time 80 d(off) G t Fall Time 66 See Figs. 20a &20b f C Input Capacitance 1680 V = 0V iss GS C Output Capacitance 350 pF V = -25V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E 120 Single Pulse Avalanche Energy mJ AS I -9.6 Avalanche Current A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current MOSFET symbol D S -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -96 S (Body Diode) p-n junction diode. V T = 25C, I = -2.5A, V = 0V Diode Forward Voltage -1.2 V SD J S GS t Reverse Recovery Time 51 76 ns T = 25C, I = -2.5A, V = -24V rr J F DD Q Reverse Recovery Charge 35 53 nC di/dt = 100A/s rr Thermal Resistance Typ. Max. Parameter Units R 20 Junction-to-Drain Lead JL C/W R 50 Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 2.6mH, R = 25, I = -9.6A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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