IRF9392PbF HEXFET Power MOSFET V -30 V DS V 25 V GS max R DS(on) max 17.5 m ( V = -10V) GS I D -9.8 A ( T = 25C) A SO-8 Applications Features and Benefits Features Resulting Benefits 25V V max Direct Drive at High V GS GS Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9392PbF SO8 Tube/Bulk 95 IRF9392TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage -30 DS V V Gate-to-Source Voltage 25 GS I T = 25C Continuous Drain Current, V -10V -9.8 D A GS I T = 70C Continuous Drain Current, V -10V -7.8 A D A GS I -80 DM Pulsed Drain Current P T = 25C 2.5 D A Power Dissipation W P T = 70C 1.6 D A Power Dissipation Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 09/30/2010 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = -250A BV Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J V = -10V, I = -9.8A R 13.6 17.5 GS D DS(on) Static Drain-to-Source On-Resistance m V = -20V, I = -7.8A 12.1 GS D V Gate Threshold Voltage -1.3 -1.9 -2.4 V GS(th) V = V , I = -25A DS GS D V Gate Threshold Voltage Coefficient -5.7 mV/C GS(th) = -24V, V = 0V I Drain-to-Source Leakage Current -1.0 V DSS DS GS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -25V Gate-to-Source Forward Leakage -10 GS GSS A V = 25V Gate-to-Source Reverse Leakage 10 GS V = -10V, I = -7.8A gfs Forward Transconductance 36 S DS D Q Total Gate Charge 14 nC V = -15V,V = -4.5V,I = -7.8A g DS GS D V = -10V Q Total Gate Charge 27 g GS V = -15V Q Gate-to-Source Charge 4.1 nC gs DS I = -7.8A Q Gate-to-Drain Charge 6.6 gd D R Gate Resistance 18 G t V = -15V, V = -4.5V d(on) Turn-On Delay Time 15 DD GS t I = -1.0A Rise Time 47 D r ns t R = 6.8 Turn-Off Delay Time 73 d(off) G t See Figs. 19a & 19b Fall Time 58 f C V = 0V Input Capacitance 1270 GS iss V = -25V C Output Capacitance 250 pF DS oss C Reverse Transfer Capacitance 180 = 1.0KHz rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 102 mJ AS I Avalanche Current -7.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D -2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -80 S p-n junction diode. (Body Diode) V T = 25C, I = -2.5A, V = 0V SD Diode Forward Voltage -1.2 V J S GS t Reverse Recovery Time 36 54 ns T = 25C, I = -2.5A, V = -24V rr DD J F Q di/dt = 100/s rr Reverse Recovery Charge 20 30 nC Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 3.3mH, R = 25 , I = -7.8A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com