IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -100 DS Available in tape and reel R ( )V = -10 V 0.30 Dynamic dV/dt rating DS(on) GS Available Repetitive avalanche rated Q max. (nC) 38 g P-channel Q (nC) 6.8 gs Available 175 C operating temperature Q (nC) 21 gd Fast switching Configuration Single Material categorization: for definitions of S compliance please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are 2 D PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, D D ruggedized device design, low on-resistance and G cost-effectiveness. S P-Channel MOSFET 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3 SiHF9530STRR-GE3 a a IRF9530SPbF IRF9530STRLPbF IRF9530STRRPbF Lead (Pb)-free a a SiHF9530S-E3 SiHF9530STL-E3 SiHF9530STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -100 DS V Gate-Source Voltage V 20 GS T = 25 C -12 C Continuous Drain Current V at - 10 V I GS D T = 100 C -8.2 A C a Pulsed Drain Current I -48 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 400 mJ AS a Avalanche Current I -12 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C 88 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -25 V, starting T = 25 C, L = 4.2 mH, R = 25 , I = -12 A (see fig. 12). DD J g AS c. I - 12 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. D, 02-May-16 Document Number: 91077 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.10 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -7.2 A - - 0.30 DS(on) GS D b Forward Transconductance g V = -50 V, I = -7.2 A 3.7 - - S fs DS D Dynamic Input Capacitance C - 860 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 340- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -93- rss Total Gate Charge Q -- 38 g I = -12 A, V = -80 V, D DS Gate-Source Charge Q --V = -10 V 6.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --21 gd Turn-On Delay Time t -12 - d(on) Rise Time t -52 - r V = -50 V, I = -12 A, DD D ns b R = 12 , R = 3.9 , see fig. 10 Turn-Off Delay Time t -3G D 1- d(off) Fall Time t -39- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.4 - 3.3 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -12 S showing the A integral reverse G a Pulsed Diode Forward Current I -- -48 SM p -n junction diode S b Body Diode Voltage V T = 25 C, I = -12 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 120 240 ns rr b T = 25 C, I = -12 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.46 0.92 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91077 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000