IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) - 60 DS Advanced Process Technology R ( )V = - 10 V 0.50 DS(on) GS Surface Mount (IRF9Z14S, SiHF9Z14S) Q (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) g 175 C Operating Temperature Q (nC) 3.8 gs Fast Switching Q (nC) 5.1 gd P-Channel Fully Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with S 2 2 I PAK (TO-262) D PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G 2 G The D PAK is a surface mount power package capable of D S accommodating die size up to HEX-4. It provides the D S G highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of is D low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. P-Channel MOSFET The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHF9Z14S-GE3 SiHF9Z14STRL-GE3 SiHF9Z14L-GE3 a IRF9Z14SPbF IRF9Z14STRLPbF IRF9Z14LPbF Lead (Pb)-free a SiHF9Z14S-E3 SiHF9Z14STL-E3 SiHF9Z14L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 6.7 C e Continuous Drain Current V at - 10 V I GS D T = 100 C - 4.7 A C a, e Pulsed Drain Current I - 27 DM Linear Derating Factor 0.29 W/C b, e Single Pulse Avalanche Energy E 140 mJ AS a Avalanche Current I - 6.7 A AR a Repetiitive Avalanche Energy E 4.3 mJ AR T = 25 C 43 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 3.6 mH, R = 25 , I = - 6.7 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z14, SiHF9Z14 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91089 www.vishay.com S11-1052-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.06 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 4.0 A -- 0.5 DS(on) GS D c Forward Transconductance g V = - 25 V, I = - 4.0 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-Off Delay Time t -10- d(off) Fall Time t -31- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 6.7 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 27 SM S b Body Diode Voltage V T = 25 C, I = - 6.7 A, V = 0 V -- - 5.5 V SD J S GS Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time t - 80 160 ns rr b, c T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F - 96 190 nC Body Diode Reverse Recovery Charge Q rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRF9Z14, SiHF9Z14 data and test conditions. www.vishay.com Document Number: 91089 2 S11-1052-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000