X-On Electronics has gained recognition as a prominent supplier of IRF9Z14SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9Z14SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9Z14SPBF Vishay

Hot IRF9Z14SPBF electronic component of Vishay
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Part No.IRF9Z14SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Chan 60V 6.7 Amp
Datasheet: IRF9Z14SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
17: USD 0.9091 ea
Line Total: USD 15.45 
Availability - 1746
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
1028
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.936
10 : USD 1.0769
100 : USD 1.0417
500 : USD 0.8943

1746
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 17
Multiples : 1
17 : USD 0.9091
100 : USD 0.8901
500 : USD 0.6668

   
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We are delighted to provide the IRF9Z14SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z14SPBF and other electronic components in the MOSFETs category and beyond.

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IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) - 60 DS Advanced Process Technology R ( )V = - 10 V 0.50 DS(on) GS Surface Mount (IRF9Z14S, SiHF9Z14S) Q (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) g 175 C Operating Temperature Q (nC) 3.8 gs Fast Switching Q (nC) 5.1 gd P-Channel Fully Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with S 2 2 I PAK (TO-262) D PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G 2 G The D PAK is a surface mount power package capable of D S accommodating die size up to HEX-4. It provides the D S G highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of is D low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. P-Channel MOSFET The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHF9Z14S-GE3 SiHF9Z14STRL-GE3 SiHF9Z14L-GE3 a IRF9Z14SPbF IRF9Z14STRLPbF IRF9Z14LPbF Lead (Pb)-free a SiHF9Z14S-E3 SiHF9Z14STL-E3 SiHF9Z14L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 6.7 C e Continuous Drain Current V at - 10 V I GS D T = 100 C - 4.7 A C a, e Pulsed Drain Current I - 27 DM Linear Derating Factor 0.29 W/C b, e Single Pulse Avalanche Energy E 140 mJ AS a Avalanche Current I - 6.7 A AR a Repetiitive Avalanche Energy E 4.3 mJ AR T = 25 C 43 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 3.6 mH, R = 25 , I = - 6.7 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z14, SiHF9Z14 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91089 www.vishay.com S11-1052-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.06 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 4.0 A -- 0.5 DS(on) GS D c Forward Transconductance g V = - 25 V, I = - 4.0 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-Off Delay Time t -10- d(off) Fall Time t -31- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 6.7 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 27 SM S b Body Diode Voltage V T = 25 C, I = - 6.7 A, V = 0 V -- - 5.5 V SD J S GS Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time t - 80 160 ns rr b, c T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F - 96 190 nC Body Diode Reverse Recovery Charge Q rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRF9Z14, SiHF9Z14 data and test conditions. www.vishay.com Document Number: 91089 2 S11-1052-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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