IRF9Z24S, SiHF9Z24S www.vishay.com Vishay Siliconix Power MOSFET FEATURES Advanced process technology PRODUCT SUMMARY Surface mount (IRF9Z24S, SiHF9Z24S) V (V) - 60 DS 175 C operating temperature Available R ( )V = - 10 V 0.28 Fast switching DS(on) GS P-channel Q max. (nC) 19 g Available Fully avalanche rated Q (nC) 5.4 gs Material categorization: for definitions of compliance Q (nC) 11 gd please see www.vishay.com/doc 99912 Note Configuration Single * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. S DESCRIPTION 2 D PAK (TO-263) Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D 2 G The D PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the S D highest power capability and the lowest possible P-Channel MOSFET on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3 SiHF9Z24STRR-GE3 a a Lead (Pb)-free IRF9Z24SPbF IRF9Z24STRLPbF IRF9Z24STRRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -11 C e Continuous Drain Current V at -10 V I GS D T = 100 C -7.7 A C a, e Pulsed Drain Current I -44 DM Linear Derating Factor 0.40 W/C b, e Single Pulse Avalanche Energy E 240 mJ AS a Repetitive Avalanche Current I -11 A AR a Repetitive Avalanche Energy E 6.0 mJ AR T = 25 C 3.7 W A Maximum Power Dissipation P D T = 25 C 60 W C c, e Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = - 11 A (see fig. 12). DD J g AS c. I - 11 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z24, SiHF9Z24 data and test conditions. S16-0015-Rev. D, 18-Jan-16 Document Number: 91091 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z24S, SiHF9Z24S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 40 thJA a (PCB mount) C/W Maximum Junction-to-Case (Drain) R -- 2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = -1 mA --0.056 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -6.6 A - - 0.28 DS(on) GS D c Forward Transconductance g V = -25 V, I = -6.6 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 570 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 360- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -65- rss Total Gate Charge Q -- 19 g I = -11 A, V = -48 V, D DS Gate-Source Charge Q --V = -10 V 5.4 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -68 - r V = -30 V, I = -11 A, DD D ns b R = 18 , R = 2.5 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -29- f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I MOSFET symbol -- -11 D S showing the A integral reverse a G Pulsed Diode Forward Current I -- -44 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = -11 A, V = 0 V -- -6.3 V SD J S GS Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time t - 100 200 ns rr b, c T = 25 C, I = -11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 320 640 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRF9Z24, SiHF9Z24 data and test conditions. S16-0015-Rev. D, 18-Jan-16 Document Number: 91091 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000