X-On Electronics has gained recognition as a prominent supplier of IRF9Z24SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9Z24SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9Z24SPBF Vishay

Hot IRF9Z24SPBF electronic component of Vishay
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Part No.IRF9Z24SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 60 V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: IRF9Z24SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.352 ea
Line Total: USD 2.35 
Availability - 141
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 34
Multiples : 1
34 : USD 0.949
50 : USD 0.949
200 : USD 0.949
750 : USD 0.949
2500 : USD 0.949

144
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1603
10 : USD 0.9695
50 : USD 0.8397
100 : USD 0.7442
500 : USD 0.687
1000 : USD 0.6585

1169
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0355
10 : USD 1.7365
100 : USD 1.426
250 : USD 1.334
500 : USD 1.219
1000 : USD 1.0695
2000 : USD 1.0603
5000 : USD 1.0534
10000 : USD 1.0293

141
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.352
10 : USD 1.12
26 : USD 0.686
71 : USD 0.644

582
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 50
Multiples : 50
50 : USD 1.6562
100 : USD 1.2536
250 : USD 1.232
500 : USD 1.2217

622
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 7
Multiples : 1
7 : USD 1.1697

582
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 50
Multiples : 50
50 : USD 1.6223
300 : USD 1.4824
450 : USD 1.3793
600 : USD 1.3008

676
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 17
Multiples : 1
17 : USD 1.6446
100 : USD 1.3832
250 : USD 1.3593
500 : USD 1.1961

   
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We are delighted to provide the IRF9Z24SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z24SPBF and other electronic components in the MOSFETs category and beyond.

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IRF9Z24S, SiHF9Z24S www.vishay.com Vishay Siliconix Power MOSFET FEATURES Advanced process technology PRODUCT SUMMARY Surface mount (IRF9Z24S, SiHF9Z24S) V (V) - 60 DS 175 C operating temperature Available R ( )V = - 10 V 0.28 Fast switching DS(on) GS P-channel Q max. (nC) 19 g Available Fully avalanche rated Q (nC) 5.4 gs Material categorization: for definitions of compliance Q (nC) 11 gd please see www.vishay.com/doc 99912 Note Configuration Single * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. S DESCRIPTION 2 D PAK (TO-263) Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D 2 G The D PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the S D highest power capability and the lowest possible P-Channel MOSFET on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3 SiHF9Z24STRR-GE3 a a Lead (Pb)-free IRF9Z24SPbF IRF9Z24STRLPbF IRF9Z24STRRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -11 C e Continuous Drain Current V at -10 V I GS D T = 100 C -7.7 A C a, e Pulsed Drain Current I -44 DM Linear Derating Factor 0.40 W/C b, e Single Pulse Avalanche Energy E 240 mJ AS a Repetitive Avalanche Current I -11 A AR a Repetitive Avalanche Energy E 6.0 mJ AR T = 25 C 3.7 W A Maximum Power Dissipation P D T = 25 C 60 W C c, e Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = - 11 A (see fig. 12). DD J g AS c. I - 11 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z24, SiHF9Z24 data and test conditions. S16-0015-Rev. D, 18-Jan-16 Document Number: 91091 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z24S, SiHF9Z24S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 40 thJA a (PCB mount) C/W Maximum Junction-to-Case (Drain) R -- 2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = -1 mA --0.056 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -6.6 A - - 0.28 DS(on) GS D c Forward Transconductance g V = -25 V, I = -6.6 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 570 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 360- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -65- rss Total Gate Charge Q -- 19 g I = -11 A, V = -48 V, D DS Gate-Source Charge Q --V = -10 V 5.4 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -68 - r V = -30 V, I = -11 A, DD D ns b R = 18 , R = 2.5 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -29- f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I MOSFET symbol -- -11 D S showing the A integral reverse a G Pulsed Diode Forward Current I -- -44 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = -11 A, V = 0 V -- -6.3 V SD J S GS Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time t - 100 200 ns rr b, c T = 25 C, I = -11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 320 640 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRF9Z24, SiHF9Z24 data and test conditions. S16-0015-Rev. D, 18-Jan-16 Document Number: 91091 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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