IRF9Z34S, SiHF9Z34S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced process technology V (V) -60 DS Surface mount (IRF9Z34S, SiHF9Z34S) R ( )V = -10 V 0.14 DS(on) GS 175 C operating temperature Available Q max. (nC) 34 g Fast switching Q (nC) 9.9 gs P-channel Available Q (nC) 16 gd Fully avalanche rated Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For S example, parts with lead (Pb) terminations are not RoHS-compliant. 2 D PAK (TO-263) Please see the information / tables in this datasheet for details. DESCRIPTION G Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer D G with an extremely efficient and reliable device for use in a D S wide variety of applications. 2 P-Channel MOSFET The D PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 SiHF9Z34STRL-GE3 SiHF9Z34STRR-GE3 a a Lead (Pb)-free IRF9Z34SPbF IRF9Z34STRLPbF IRF9Z34STRRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -18 C Continuous Drain Current V at -10 V I GS D T = 100 C -13 A C a, e Pulsed Drain Current I -72 DM Linear Derating Factor 0.59 W/C b, e Single Pulse Avalanche Energy E 370 mJ AS a Avalanche Current I -18 A AR a Repetitive Avalanche Energy E 8.8 mJ AR T = 25 C 88 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 1.3 mH, R = 25 , I = - 18 A (see fig. 12). DD J g AS c. I - 18 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z34, SiHF9Z34 data and test conditions. S16-0754-Rev. E, 02-May-16 Document Number: 91093 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z34S, SiHF9Z34S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 thJA a mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = -1 mA --0.06 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -11 A - - 0.14 DS(on) GS D c Forward Transconductance g V = -25 V, I = -11 A 5.9 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 620- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -100- rss Total Gate Charge Q -- 34 g I = -18 A, V = -48 V, D DS Gate-Source Charge Q --V = -10 V 9.9 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -18 - d(on) Rise Time t - 120 - r V = -30 V, I = -18 A, DD D ns b, c R = 12 , R = 1.5 , see fig. 10 g D Turn-Off Delay Time t -20- d(off) Fall Time t -58- f Gate Input Resistance R f = 1 MHz, open drain 0.7 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -18 S showing the A integral reverse G a p -n junction diode Pulsed Diode Forward Current I S -- -72 SM b Body Diode Voltage V T = 25 C, I = -18 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b, c T = 25 C, I = -18 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 280 520 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes b. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). c. Pulse width 300 s duty cycle 2 %. d. Uses IRF9Z34, SiHF9Z34 data and test conditions. S16-0754-Rev. E, 02-May-16 Document Number: 91093 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000