IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 600 DS Surface Mount (IRFBC20S, SiHFBC20S) R ( )V = 10 V 4.4 DS(on) GS Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Q (Max.) (nC) 18 Available in Tape and Reel (IRFBC20, SiiHFBC20S) g Dynamic dV/dt Rating Q (nC) 3.0 gs 150 C Operating Temperature Q (nC) 8.9 gd Fast Switching Fully Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION 2 2 D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the I PAK (TO-262) designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 2 G The D PAK is a surface mount power package capable of G D the accommodating die sizes up to HEX-4. It provides the S D S highest power capability and the lowest possible G on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of S its low internal connection resistance and can dissipate up N-Channel MOSFET to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L, SiHFBC20L) is a available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHFBC20S-GE3 SiHFBC20STRL-GE3 SiHFBC20L-GE3 a IRFBC20SPbF IRFBC20STRLPbF IRFBC20LPbF Lead (Pb)-free a SiHFBC20S-E3 SiHFBC20STL-E3 SiHFBC20L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT 600 Drain-Source Voltage V DS V Gate-Source Voltage V 20 GS T = 25 C 2.2 C e Continuous Drain Current V at 10 V I GS D T = 100 C 1.4 A C a, e Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.40 W/C b, e Single Pulse Avalanche Energy E 84 mJ AS a Avalanche Current I 2.2 A AR a Repetiitive Avalanche Energy E 5.0 mJ AR T = 25 C 3.1 A Maximum Power Dissipation P W D T = 25 C 50 C c, e Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 31 mH, R = 25 , I = 2.2 A (see fig. 12). DD J g AS c. I 2.2 A, dI/dt 40 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFBC20, SiHFBC20 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91107 www.vishay.com S11-1052-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 600 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.88 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.3 A -- 4.4 DS(on) GS D c Forward Transconductance g V = 50 V, I = 1.3 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 350 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 8- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -8.6- rss Total Gate Charge Q -- 18 g I = 2.0 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 3.0 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --8.9 gd Turn-On Delay Time t -10 - d(on) Rise Time t -23 - r V = 300 V, I = 2.0 A, DD D ns b, c R = 18 , R = 150 , see fig. 10 g D Turn-Off Delay Time t -30- d(off) Fall Time t -25- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D -- 2.2 Continuous Source-Drain Diode Current I S showing the A integral reverse G a Pulsed Diode Forward Current I -- 8.0 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 2.2 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 290 580 ns rr b, c T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.67 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRFBC20, SiHFBC20 data and test conditions. www.vishay.com Document Number: 91107 2 S11-1052-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000