IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 600 DS Surface Mount (IRFBC30S, SiHFBC30S) R ( )V = 10 V 2.2 DS(on) GS Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Q (Max.) (nC) 31 g Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Q (nC) 4.6 gs 150 C Operating Temperature Q (nC) 17 gd Fast Switching Configuration Single Fully Avalanche Rated Compliant to RoHS Directive 2002/95/EC D DESCRIPTION 2 2 D PAK (TO-263) I PAK (TO-262) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G 2 D The D PAK is a surface mount power package capable of S D S the accommodating die sizes up to HEX-4. It provides the G highest power capability and the lowest possible on-resistance in any existing surface mount package. The S 2 D PAK is suitable for high current applications because of N-Channel MOSFET its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHFBC30S-GE3 SiHFBC30STRL-GE3 SiHFBC30L-GE3 a IRFBC30SPbF IRFBC30STRLPbF IRFBC30LPbF Lead (Pb)-free a SiHFBC30S-E3 SiHFBC30STL-E3 SiHFBC30L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage 600 V DS V Gate-Source Voltage 20 V GS 3.6 T = 25 C C e Continuous Drain Current V at 10 V I GS D 2.3 A T = 100 C C a, e 14 Pulsed Drain Current I DM Linear Derating Factor 0.59 W/C b, e Single Pulse Avalanche Energy 290 mJ E AS a Avalanche Current 3.6 A I AR a Repetiitive Avalanche Energy 7.4 mJ E AR 3.1 T = 25 C A Maximum Power Dissipation W P D 74 T = 25 C C c, e Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range - 55 to + 150 T , T J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 41 mH, R = 25 , I = 3.6 A (see fig. 12). DD J g AS c. I 3.6 A, dI/dt 60 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFBC30, SiHFBC30 data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91111 www.vishay.com S11-1053-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note AN-994. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 600 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.62 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.2 A -- 2.2 DS(on) GS D c Forward Transconductance g V = 50 V, I = 2.2 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 660 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 6- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -19- rss Total Gate Charge Q -- 31 g I = 3.6 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 4.6 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --17 gd Turn-On Delay Time t -11 - d(on) Rise Time t -13 - r V = 300 V, I = 3.6 A, DD D ns b, c R = 12 , R = 82 , see fig. 10 g D Turn-Off Delay Time t -35- d(off) Fall Time t -14- f Internal Source Inductance L Between lead, and center of die contcat - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D -- 3.6 Continuous Source-Drain Diode Current I S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 14 SM S b Body Diode Voltage V T = 25 C, I = 3.6 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 370 810 ns rr b, c T = 25 C, I = 3.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.0 4.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRFBC30, SiHFBC30 data and test conditions. www.vishay.com Document Number: 91111 2 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000