IRFBC40LC, SiHFBC40LC www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra low gate charge V (V) 600 Reduced gate drive requirement DS Available rating Enhanced 30 V, V GS R ( )V = 10 V 1.2 DS(on) GS Reduced C , C , C iss oss rss Available Q max. (nC) 39 g Extremely high frequency operation Q (nC) 10 gs Repetitive avalanche rated Q (nC) 19 Material categorization: for definitions of compliance gd please see www.vishay.com/doc 99912 Configuration Single Note * This datasheet provides information about parts that are D RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. TO-220AB DESCRIPTION This new series of low charge power MOSFETs achieve G significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total S S system savings. In addition reduced switching losses and D improved efficiency are achievable in a variety of high G N-Channel MOSFET frequency applications. Frequencies of a few MHz at high current are possible using the new low charge power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of power MOSFETs offer the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package TO-220AB IRFBC40LCPbF Lead (Pb)-free SiHFBC40LC-E3 IRFBC40LC SnPb SiHFBC40LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 6.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.9 A C a Pulsed Drain Current I 25 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 530 mJ AS a Repetitive Avalanche Current I 6.2 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 25 mH, R = 25 , I = 6.2 A (see fig. 12). DD J g AS c. I 6.2 A, dI/dt 80 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91114 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFBC40LC, SiHFBC40LC www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 -- 100nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.7 A -- 1.2 DS(on) GS D b Forward Transconductance g V = 100 V, I = 3.7 A 3.7 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V GS Output Capacitance C -1V = 25 V 40- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 39 g I = 6.2 A, V = 360 V, D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -12 - d(on) Rise Time t -20 - r V = 300 V, I = 6.2 A DD D ns b Turn-Off Delay Time t -27- R = 9.1 , R = 47, see fig. 10 d(off) g D Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.6 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6.2 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 25 SM S b Body Diode Voltage V T = 25 C, I = 6.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 440 680 ns rr b T = 25 C, I = 6.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.1 3.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0763-Rev. D, 02-May-16 Document Number: 91114 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000