X-On Electronics has gained recognition as a prominent supplier of IRFBE30STRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFBE30STRLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFBE30STRLPBF Vishay

IRFBE30STRLPBF electronic component of Vishay
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Part No.IRFBE30STRLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 800V 4.1A 125W
Datasheet: IRFBE30STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.741 ea
Line Total: USD 4.74 
Availability - 815
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
815
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 4.741
10 : USD 3.201
100 : USD 2.299
800 : USD 2.024

   
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We are delighted to provide the IRFBE30STRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBE30STRLPBF and other electronic components in the MOSFETs category and beyond.

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 800 DS Definition R ( )V = 10 V 3.0 DS(on) GS Dynamic dV/dt Rating Q (Max.) (nC) 78 g Repetitive Avalanche Rated Q (nC) 9.6 gs Fast Switching Q (nC) 45 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC 2 2 D PAK I PAK (TO-262) (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and G D S cost-effectiveness. D S G S N-Channel MOSFET ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHFBE30S-GE3 SiHFBE30STRL-GE3 SiHFBE30L-GE3 a IRFBE30SPbF IRFBE30STRLPbF IRFBE30LPbF Lead (Pb)-free a SiHFBE30S-E3 SiHFBE30STL-E3 SiHFBE30L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 800 DS V Gate-Source Voltage V 20 GS T = 25 C 4.1 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.6 A C a Pulsed Drain Current I 16 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 260 mJ AS a Avalanche Current I 4.1 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 2.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 29 mH, R = 25 , I = 4.1 A (see fig. 12). DD J g AS c. I 4.1 A, dI/dt 100 A/s, V 600 V, T 150 C. SD DD J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91119 www.vishay.com S11-1053-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R -- 62 thJA Case-to-Sink, Flat, Greased Surface R -0.50- C/W thCS Maximum Junction-to-Case (Drain) R -- 1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 800 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.90 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 800 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 640 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.5 A -- 3.0 DS(on) GS D Forward Transconductance g V = 100 V, I = 2.5 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 1300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 310- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -190- rss Total Gate Charge Q -- 78 g I = 4.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 9.6 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --45 gd Turn-On Delay Time t -12 - d(on) Rise Time t -33 - r V = 400 V, I = 4.1 A, DD D ns b R = 12 , R = 95 , see fig. 10 g D Turn-Off Delay Time t -82- d(off) Fall Time t -30- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 4.1 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 16 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 4.1 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 480 720 ns rr b T = 25 C, I = 4.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.7 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91119 2 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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