StrongIRFET IRFB7746PbF HEXFET Power MOSFET Application Brushed motor drive applications D V 75V BLDC motor drive applications DSS Battery powered circuits R typ. 9.0m Half-bridge and full-bridge topologies DS(on) G Synchronous rectifier applications max 10.6m Resonant mode power supplies S OR-ing and redundant power switches I 59A D DC/DC and AC/DC converters DC/AC inverters Benefits S Improved gate, avalanche and dynamic dV/dt ruggedness D G Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability TO-220AB Lead-free, RoHS compliant Halogen-free G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7746PbF TO-220 Tube 50 IRFB7746PbF 25 60 I = 35A D 50 20 40 T = 125C 30 15 J 20 10 10 T = 25C J 5 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB7746PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 59 D C GS I T = 100C Continuous Drain Current, V 10V 42 A D C GS I Pulsed Drain Current 219 DM P T = 25C Maximum Power Dissipation 99 W D C Linear Derating Factor 0.66 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics Symbol Parameter Max. Units E 111 Single Pulse Avalanche Energy mJ AS (Thermally limited) E Single Pulse Avalanche Energy 154 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC Case-to-Sink, Flat Greased Surface R 0.50 C/W CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 9.0 10.6 m V = 10V, I = 35A DS(on) GS D 10.4 V = 6.0V, I = 18A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.6 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 170H, R = 50 , I = 35A, V =10V. Jmax J G AS GS I 35A, di/dt 432A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 18A, V =10V. Jmax J G AS GS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014