X-On Electronics has gained recognition as a prominent supplier of IRFBF30PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFBF30PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFBF30PBF Vishay

IRFBF30PBF electronic component of Vishay
IRFBF30PBF Vishay
IRFBF30PBF MOSFETs
IRFBF30PBF  Semiconductors

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See Product Specifications
Part No. IRFBF30PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRFBF30PBF
Datasheet: IRFBF30PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 1.6232 ea
Line Total: USD 64.93 
Availability - 0
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
598
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.025
10 : USD 2.2425
25 : USD 1.683
1000 : USD 1.65
2000 : USD 1.584

   
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We are delighted to provide the IRFBF30PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBF30PBF and other electronic components in the MOSFETs category and beyond.

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The Vishay IRFB30PBF is a N-Channel Power MOSFET designed for use in high frequency applications such as DC/DC converters, motor control circuits, and other power management applications. This device is built on a HexFET III technology, and has an integrated ultra low gate charge and fast switching capability, making it suitable for any high frequency application. It features a 30V drain-source breakdown voltage, a 10.3A continuous drain current at 25°C, and a maximum drain-source on-resistance of 0.27O. This device is housed in a TO-220F package, making it suitable for use in a variety of PCB assemblies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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