IRFD020, SiHFD020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion V (V) 50 DS Available Compact, End Stackable R ( )V = 10 V 0.10 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 24 COMPLIANT g Ease of Paralleling Q (nC) 7.1 gs Excellent Temperature Stability Q (nC) 7.1 gd Configuration Single Compliant to RoHS Directive 2002/95/EC D HVMDIP DESCRIPTION The HVMDIP technology is the key to Vishays advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high G transconductance and extreme device ruggedness. S G HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease D of paralleling, and temperature stability of the electrical S parameters. The HVMDIP 4 pin, dual-in-line package brings the N-Channel MOSFET advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. ORDERING INFORMATION Package HVMDIP IRFD020PbF Lead (Pb)-free SiHFD020-E3 IRFD020 SnPb SiHFD020 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT a Drain-Source Voltage V 50 DS V Gate-Source Voltage V 20 GS T = 25 C 2.4 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.5 A C b Pulsed Drain Current I 19 DM Linear Derating Factor 0.0080 W/C Inductive Current, Clamped L = 100 H I 19 LM A c Unclamped Inductive Current (Avalanche Current) I 2.2 L Maximum Power Dissipation T = 25 C P 1.0 W C D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. T = 25 C to 150 C J b. Repetitive rating pulse width limited by maximum junction temperature. c. V = 25 V, starting T = 25 C, L = 100 H, R = 25 DD J g d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91465 www.vishay.com S11-0915-Rev. A, 16-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFD020, SiHFD020 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 50 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - 250 DS GS Zero Gate Voltage Drain Current I A DSS V = max. rating x 0.8, V = 0 V, T = 125 - - 1000 DS GS C b On-State Drain Current I V = 10 V V > I x R max. 2.4 - - A D(on) GS DS D(on) DS(on) b Drain-Source On-State Resistance R V = 10 V I = 1.4 A - 0.080 0.10 DS(on) GS D b Forward Transconductance g V = 20 V, I = 7.5 A 4.9 7.3 - S fs DS D Dynamic Input Capacitance C - 400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 260- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -44- rss Total Gate Charge Q -16 24 g I = 15 A, D Gate-Source Charge Q -4V = 10 V .77.1 nC gs GS V = max. rating x 0.8 DS Gate-Drain Charge Q -4.77.1 gd Turn-On Delay Time t -8.7 13 d(on) Rise Time t -55 83 r V = 25 V, I = 15 A, DD D ns R = 18 , R = 1.7 Turn-Off Delay Time t -1624 d(off) g D Fall Time t -2639 f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.4 S showing the A integral reverse G c p - n junction diode Pulsed Diode Forward Current I -- 19 S SM a Body Diode Voltage V T = 25 C, I = 2.4 A, V = 0 V - - 1.4 V SD C S GS Body Diode Reverse Recovery Time t 57 130 310 ns rr T = 25 C, I = 15 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q 0.17 0.34 0.85 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. V = 25 V, starting T = 25 C, L = 100 H, R = 25 DD J g www.vishay.com Document Number: 91465 2 S11-0915-Rev. A, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000