IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion V (V) 60 DS Compact Plastic Package R ()V = 10 V 0.8 DS(on) GS End Stackable Q (Max.) (nC) 7 g Q (nC) 2 Fast Switching gs Q (nC) 7 gd Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to RoHS Directive 2002/95/EC D Note * Pb containing terminations are not RoHS compliant, exemptions HVMDIP may apply DESCRIPTION G The HVMDIP technology is the key to Vishays advanced line of power MOSFET transistors. The efficient geometry S and unique processing of the HVMDIP design achieves G S very low on-state resistance combined with high D transconductance and extreme device ruggedness. N-Channel MOSFET HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. ORDERING INFORMATION Package HVMDIP IRFD113PbF Lead (Pb)-free SiHFD113-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT a Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS Continuous Drain Current V at 10 V T = 25 C I 0.8 GS C D A b Pulsed Drain Current I 6.4 DM Linear Derating Factor 0.008 W/C Inductive Current, Clamped L = 100 H I 6.4 A LM Maximum Power Dissipation T = 25 C P 1.0 W C D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C c Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. T = 25 C to 150 C J b. Repetitive rating pulse width limited by maximum junction temperature. c. 1.6 mm from case. S11-2479-Rev. A, 19-Dec-11 Document Number: 91487 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFD113, SiHFD113 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - 250 DS GS Zero Gate Voltage Drain Current I A DSS V = max. rating x 0.8, V = 0 V, T = 125 C - - 1000 DS GS C b On-State Drain Current I V = 10 V V > I x R max. 0.8 - - A D(on) GS DS D(on) DS(on) b Drain-Source On-State Resistance R V = 10 V I = 0.8 A - 0.6 0.8 DS(on) GS D b Forward Transconductance g V > I x R max., I = 0.8 A 0.8 1.2 - S fs DS D(on) DS(on) D Dynamic Input Capacitance C - 135 200 iss V = 0 V, GS Output Capacitance C -8V = 25 V, 0100 pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -2025 rss Total Gate Charge Q -5 7 g I = 4 A, D Gate-Source Charge Q -2V = 10 V - nC gs GS V = 0.8 max. rating DS Gate-Drain Charge Q -7- gd Turn-On Delay Time t -10 20 d(on) Rise Time t -15 25 r V = 0.5 V , I = 0.8 A, DD DS D ns Turn-Off Delay Time t -1525 d(off) R = 50 g Fall Time t -1020 f D Internal Drain Inductance L Between lead, -4.0 - D 2 mm (0.08 ) from nH package and center of G Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I -- 0.8 S D showing the A integral reverse G Pulsed Diode Forward Current I -- 6.4 SM p - n junction diode S a Body Diode Voltage V T = 25 C, I = 0.8 A, V = 0 V - - 2 V SD A S GS Body Diode Reverse Recovery Time t - 100 - ns rr T = 150 C, I = 1.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.2 - C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S11-2479-Rev. A, 19-Dec-11 Document Number: 91487 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
