BSP179 SIPMOS Small-Signal-Transistor Product Summary Features V 400 V DS N-channel R 24 W DS(on),max Depletion mode I 40 mA DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant PG-SOT223 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 9.18 13.14 24.96 102.48 Halogen- Type Package Tape and Reel Marking Packaging PG-SOT223 BSP179 BSP179 H6327: 1000 pcs/reel Yes Non dry PG-SOT223 BSP179 BSP179 H6906: 1000 pcs/reel Yes Non dry 1) sorted in V bands GS(th) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 0.21 A D A T =70C 0.17 A Pulsed drain current I T =25C 0.83 D,pulse A I =0.21A, V =20V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS ESD sensitivity (HBM) as per 1A (>250V, <500V) JESD-A114-HBM Power dissipation P T =25C 1.8 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.0 page 1 2015-06-23BSP179 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point (pin 4) R SMD version, device on PCB minimal footprint - - 115 thJA 2 2) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =-3V, I =250A 400 - - V (BR)DSS GS D Gate threshold voltage V V =3V, I =94A -2.1 -1.4 -1 GS(th) DS D V =400V, V =-3V, DS GS Drain-source cutoff current I - - 0.1 A D(off) T =25C j V =400V, V =-3V, DS GS - - 10 T =150C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS I V =0V, V =10V On-state drain current 40 - - mA DSS GS DS R V =0V, I =0.01A Drain-source on-state resistance - 18 24 W DS(on) GS D V =10V, I =0.21A - 13 18 GS D V >2 I R , DS D DS(on)max g Transconductance 0.21 - S fs I =0.17A D 3) Threshold voltage V sorted in bands GS(th) J V V =3V, I =94A -1.2 - -1 V GS(th) DS D K -1.35 - -1.15 L -1.5 - -1.30 M -1.65 - -1.45 N -1.8 - -1.6 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.0 page 2 2015-06-23