X-On Electronics has gained recognition as a prominent supplier of IPB156N22NFDATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB156N22NFDATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB156N22NFDATMA1 Infineon

IPB156N22NFDATMA1 electronic component of Infineon
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Part No.IPB156N22NFDATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: OptiMOS FD N-channel Power Transistor 15.6m? 300W 220V PG-TO 263-3 T/R
Datasheet: IPB156N22NFDATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.0256 ea
Line Total: USD 9.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 8.8645

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 15.6142
10 : USD 13.6123
100 : USD 11.2704
500 : USD 9.8142

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 15.6142
10 : USD 13.6123
100 : USD 11.2704
500 : USD 9.8142

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 9.0256
10 : USD 6.1695
100 : USD 4.5064
500 : USD 4.3615
1000 : USD 4.3463

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 5.1288

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 8.1577
10 : USD 7.0894
100 : USD 5.866
500 : USD 5.495
1000 : USD 5.485

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPB156N22NFDATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB156N22NFDATMA1 and other electronic components in the MOSFETs category and beyond.

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IPB156N22NFD MOSFET TM DPAK OptiMOS FD Power-Transistor, 220 V Features N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 220 V DS Gate Pin 1 RDS(on),max 15.6 m Source Pin 3 I 72 A D Type / Ordering Code Package Marking Related Links IPB156N22NFD PG-TO 263-3 156N22NF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2017-06-19TM OptiMOS FD Power-Transistor, 220 V IPB156N22NFD Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.0, 2017-06-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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