IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 400 DS Repetitive avalanche rated RoHS R ()V = 10 V 1.8 DS(on) GS COMPLIANT For automatic insertion Q (Max.) (nC) 20 g End stackable Q (nC) 3.3 gs Fast switching Q (nC) 11 gd Configuration Single Ease of paralleling Simple drive requirements D Material categorization: for definitions of compliance HVMDIP please see www.vishay.com/doc 99912 DESCRIPTION G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S G ruggedized device design, low on-resistance and cost-effectiveness. D S The 4 pin DIP package is a low cost machine-insertiable N-Channel MOSFET case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD320PbF Lead (Pb)-free SiHFD320-E3 IRFD320 SnPb SiHFD320 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 0.49 A Continuous Drain Current V at 10 V I GS D T = 100 C 0.31 A A a Pulsed Drain Current I 3.9 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 48 mJ AS a Avalanche Current I 0.49 A AR a Repetitive Avalanche Energy E 0.10 mJ AR Maximum Power Dissipation T = 25 C P 1.0 W A D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 21 mH, R = 25 , I = 2.0 A (see fig. 12). DD J g AS c. I 2.0 A, dI/dt 40 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S14-2355-Rev. D, 08-Dec-14 Document Number: 91134 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFD320, SiHFD320 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.51 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.21 A -- 1.8 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.2 A 1.7 - - S fs DS D Dynamic Input Capacitance C - 410 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 120- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -47- rss Total Gate Charge Q -- 20 g I = 2.0 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -14 - r V = 200 V, I = 3.3 A, DD D ns b Turn-Off Delay Time t -3R = 18 , R = 56 , see fig. 100- d(off) g D Fall Time t -13- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - 0.49 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 3.9 SM S b Body Diode Voltage V T = 25 C, I = 0.49 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 600 ns rr b T = 25 C, I = 3.3 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.4 3.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-2355-Rev. D, 08-Dec-14 Document Number: 91134 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000