IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 60 DS Repetitive Avalanche Rated Available R ( )V = - 10 V 0.28 DS(on) GS For Automatic Insertion RoHS* Q (Max.) (nC) 19 g COMPLIANT End Stackable Q (nC) 5.4 gs P-Channel Q (nC) 11 gd Fast Switching Configuration Single 175 C Operating Temperature S Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S cost-effectiveness. G The 4 pin DIP package is a low cost machine-insertable D case style which can be stacked in multiple combinations on D standard 0.1 pin centers. The dual drain servers as a P-Channel MOSFET thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD9024PbF Lead (Pb)-free SiHFD9024-E3 IRFD9024 SnPb SiHFD9024 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 1.6 A Continuous Drain Current V at - 10 V I GS D T = 100 C - 1.1 A A a Pulsed Drain Current I - 13 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Avalanche Current I - 1.6 A AR a Repetitive Avalanche Energy E 0.13 mJ AR Maximum Power Dissipation T = 25 C P 1.3 W A D c Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 15 mH, R = 25 , I = - 3.2 A (see fig. 12). DD J g AS c. I - 11 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91137 www.vishay.com S10-2463-Rev. C, 08-Nov-10 1IRFD9024, SiHFD9024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.056 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 0.96 A - - 0.28 DS(on) GS D b Forward Transconductance g V = - 25 V, I = - 0.96 A 1.3 - - S fs DS D Dynamic Input Capacitance C - 570 - iss V = 0 V GS Output Capacitance C -V = - 25 V 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -65- rss Total Gate Charge Q -- 19 g I = - 11 A, V = - 48 V D DS Gate-Source Charge Q --V = - 10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -68 - r V = - 30 V, I = - 11 A DD D ns b Turn-Off Delay Time t -1R = 18 , R = 2.5 , see fig. 105- d(off) g D Fall Time t -29- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.6 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- - 13 SM S b Body Diode Voltage V T = 25 C, I = - 1.6 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = - 11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.32 0.64 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % www.vishay.com Document Number: 91137 2 S10-2463-Rev. C, 08-Nov-10