IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 200 DS Available Repetitive Avalanche Rated R ()V = - 10 V 3.0 DS(on) GS RoHS* For Automatic Insertion Q (Max.) (nC) 8.9 COMPLIANT g End Stackable Q (nC) 2.1 gs P-Channel Q (nC) 3.9 gd Fast Switching Configuration Single Ease of Paralleling S Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION G The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs S design archieve very low on-state resistance combined with G high transconductance and extreme device ruggedness. D D The 4 pin DIP package is a low cost machine-insertable case P-Channel MOSFET style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD9210PbF Lead (Pb)-free SiHFD9210-E3 IRFD9210 SnPb SiHFD9210 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS T = 25 C - 0.40 A Continuous Drain Current V at - 10 V I GS D T = 100 C - 0.25 A A a Pulsed Drain Current I - 3.2 DM Linear Derating Factor 0.0083 W/C b Single Pulse Avalanche Energy E 210 mJ AS a Repetitive Avalanche Current I - 0.40 A AR a Repetitive Avalanche Energy E 0.10 mJ AR Maximum Power Dissipation T = 25 C P 1.0 W A D c Peak Diode Recovery dV/dt dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 50 V, starting T = 25 C, L = 123 mH, R = 25 , I = - 1.6 A (see fig. 12). DD J g AS c. I - 2.3 A, dI/dt 70 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91140 www.vishay.com S10-2464-Rev. C, 25-Oct-10 1 IRFD9210, SiHFD9210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 - - V DS GS D V /T - - 0.23 - V Temperature Coefficient Reference to 25 C, I = - 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 0.24 A -- 3.0 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 0.24 A 0.27 - - S fs DS D Dynamic V = 0 V, Input Capacitance C - 170 - GS iss Output Capacitance C -5V = - 25 V, 4- pF oss DS Reverse Transfer Capacitance C -1f = 1.0 MHz, see fig. 5 6- rss Total Gate Charge Q -- 8.9 g I = - 1.3 A, V = - 160 V D DS Gate-Source Charge Q --V = - 10 V 2.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.9 gd Turn-On Delay Time t -8.0 - d(on) V = - 100 V, I = - 2.3 A DD D Rise Time t -12 - r ns R = 24 , R = 41 g D Turn-Off Delay Time t -11- d(off) b see fig. 10 Fall Time t -13- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I - - - 0.40 S showing the A integral reverse G a Pulsed Diode Forward Current I -- - 3.2 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = - 0.40 A, V = 0 V -- - 5.8 V SD J S GS Body Diode Reverse Recovery Time t - 110 220 ns rr b T = 25 C, I = - 2.3 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.56 1.1 C rr Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91140 2 S10-2464-Rev. C, 25-Oct-10