IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package V (V) 100 DS High Voltage Isolation = 2.5 kV (t = 60 s Available RMS R ( )V = 10 V 0.54 f = 60 Hz) DS(on) GS RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Q (Max.) (nC) 8.3 g 175 C Operating Temperature Q (nC) 2.3 gs Dynamic dV/dt Rating Q (nC) 3.8 gd Low Thermal Resistance Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220 FULLPAK DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. G The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation S capability and a low thermal resistance between the tab and S D N-Channel MOSFET external heatsink. This isolation is equivalent to using a 100 G micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK IRFI510GPbF Lead (Pb)-free SiHFI510G-E3 IRFI510G SnPb SiHFI510G ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.2 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.18 W/C b Single Pulse Avalanche Energy E 60 mJ AS a Repetitive Avalanche Current I 4.5 A AR a Repetitive Avalanche Energy E 2.7 mJ AR Maximum Power Dissipation T = 25 C P 27 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.4 mH, R = 25 , I = 4.5 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90178 www.vishay.com S10-2325-Rev. B, 11-Oct-10 1IRFI510G, SiHFI510G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -5.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 -- GSS GS 100 nA V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.7 A -- 0.54 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.7 A 1.2 - - fs DS D S Dynamic V = 0 V Input Capacitance C - 180 - iss GS Output Capacitance C -8V = 25 V 1- oss DS pF Reverse Transfer Capacitance C -15- f = 1.0 MHz, see fig. 5 rss Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.8 gd Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A DD D ns Turn-Off Delay Time t -15- d(off) b R = 24 , R = 8.4, see fig. 10 g D Fall Time t -9.4- f Between lead, D Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.5 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 18 SM S b Body Diode Voltage V -- SD T = 25 C, I = 4.5 A, V = 0 V 2.5 V J S GS Body Diode Reverse Recovery Time t - rr 100 200 ns b T = 25 C, I = 5.6 A, di/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 0.44 0.88 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90178 2 S10-2325-Rev. B, 11-Oct-10
