IRFI9530G, SiHFI9530G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
V (V) - 100
DS
High Voltage Isolation = 2.5 kV (t = 60 s;
RMS
Available
f = 60 Hz)
R ()V = - 10 V 0.30
DS(on) GS
RoHS*
Sink to Lead Creepage Distance = 4.8 mm
Q (Max.) (nC) 38 COMPLIANT
g
P-Channel
Q (nC) 6.8
gs
175 C Operating Temperature
Q (nC) 21
gd
Dynamic dV/dt Rating
Configuration Single
Low Thermal Resistance
Lead (Pb)-free Available
S
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
D
S
D
external heatsink. This isolation is equivalent to using a 100
G
P-Channel MOSFET
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package TO-220 FULLPAK
IRFI9530GPbF
Lead (Pb)-free
SiHFI9530G-E3
IRFI9530G
SnPb
SiHFI9530G
ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V - 100
DS
V
Gate-Source Voltage V 20
GS
T = 25 C - 7.7
C
Continuous Drain Current V at - 10 V I
GS D
T = 100 C - 5.4 A
C
a
Pulsed Drain Current I - 31
DM
Linear Derating Factor 0.28 W/C
b
Single Pulse Avalanche Energy E 380 mJ
AS
a
Repetitive Avalanche Current I - 7.7 A
AR
a
Repetitive Avalanche Energy E 4.2 mJ
AR
Maximum Power Dissipation T = 25 C P 42 W
C D
c
Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 175
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 N m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = - 25 V, starting T = 25 C, L = 9.6 mH, R = 25 , I = - 7.7 A (see fig. 12).
DD J G AS
c. I - 7.7 A, dI/dt 140 A/s, V V , T 175 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91163 www.vishay.com
S09-0044-Rev. A, 19-Jan-09 1IRFI9530G, SiHFI9530G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -65
thJA
C/W
Maximum Junction-to-Case (Drain) R -3.6
thJC
SPECIFICATIONS T = 25 C, unless otherwise noted
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A - 100 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - - 0.10 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = 250 A - 2.0 - -4 .0 V
GS(th) DS GS D
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = - 100 V, V = 0 V - - - 100
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = - 80 V, V = 0 V, T = 150 C - - - 500
DS GS J
b
Drain-Source On-State Resistance R V = - 10 V I = - 4.6 A - - 0.30
DS(on) GS D
b
Forward Transconductance g V = - 50 V, I = - 4.6 A 3.4 - - S
fs DS D
Dynamic
Input Capacitance C - 860 -
iss
V = 0 V,
GS
Output Capacitance C -V = - 25 V, 340-
oss DS
pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -93-
rss
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q -- 38
g
I = - 12 A, V = - 80 V,
D DS
Gate-Source Charge Q --V = - 10 V 6.8 nC
gs GS
b
see fig. 6 and 13
Gate-Drain Charge Q --21
gd
Turn-On Delay Time t -12 -
d(on)
V = - 50 V, I = - 12 A,
Rise Time t DD D -52 -
r
R = 12 R = 3.9 , ns
G , D
b
Turn-Off Delay Time t -31-
d(off) see fig. 10
Fall Time t -39-
f
D
Between lead,
Internal Drain Inductance L -4.5 -
D
6 mm (0.25") from
nH
package and center of G
Internal Source Inductance L die contact -7.5 -
S
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- - 7.7
S
showing the
A
G
integral reverse
a
Pulsed Diode Forward Current I -- - 31
SM
S
p - n junction diode
b
Body Diode Voltage V T = 25 C, I = - 7.7 A, V = 0 V -- - 6.3 V
SD J S GS
Body Diode Reverse Recovery Time t - 120 240 ns
rr
b
T = 25 C, I = - 12 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q - 0.46 0.92 C
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91163
2 S09-0044-Rev. A, 19-Jan-09