IRFI9610G www.vishay.com Vishay Siliconix Power MOSFET FEATURES S TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) G Sink to lead creepage distance = 4.8 mm P-channel Dynamic dV/dt rating SS D Low thermal resistance DD G P-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) -200 DS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, R ()V = -10 V 3.0 DS(on) GS ruggedized device design, low on-resistance and Q (Max.) (nC) 13 g cost-effectiveness. Q (nC) 3.2 gs The TO-220 FULLPAK eliminates the need for additional Q (nC) 7.3 gd insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation Configuration Single capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI9610GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT V -200 Drain-source voltage DS V Gate-source voltage V 20 GS -2.0 T = 25 C C I Continuous drain current V at -10 V GS D -1.3 A T = 100 C C a Pulsed drain current I -8.0 DM 0.22 W/C Linear derating factor b Single pulse avalanche energy E 100 mJ AS a I -2.0 A Repetitive avalanche current AR a E 2.7 mJ Repetitive avalanche energy AR Maximum power dissipation T = 25 C P 27 W D C c dV/dt -11 V/ns Peak diode recovery dV/dt T , T -55 to +150 Operating junction and storage temperature range J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 51 mH, R = 25 , I = -2.0 A (see fig. 12) J G AS c. I -2.0 A, dI/dt -250 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0459-Rev. B, 10-May-2021 Document Number: 91165 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFI9610G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -4.6 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = -250 A -200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.22 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -200 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -160 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -1.2 A -- 3.0 DS(on) GS D b Forward transconductance g V = -50 V, I = -1.2 A 0.7 - - S fs DS D Dynamic Input capacitance C - 180 - iss V = 0 V, GS Output capacitance C -6V = -25 V, 6- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -12- rss Total gate charge Q -- 13 g I = -2.0 A, V = -160 V, D DS Gate-source charge Q --V = -10 V 3.2 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.3 gd Turn-on delay time t -12 - d(on) V = -100 V, I = -2.0 A, Rise time t DD D -17 - r R = 24 V = -10 V, ns G , GS Turn-off delay time t -1b 9- d(off) see fig. 10 Fall time t -15- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -2.0 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- -8.0 SM S b Body diode voltage V T = 25 C, I = -2.0 A, V = 0 V -- -5.8 V SD J S GS Body diode reverse recovery time t - 130 200 ns rr b T = 25 C, I = -2.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 700 1050 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0459-Rev. B, 10-May-2021 Document Number: 91165 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000