IRFIB6N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Low gate charge Q results in simple drive g requirement Improved gate, avalanche and dynamic dV/d t ruggedness G Fully characterized capacitance and avalanche voltage and current Material categorization: for definitions of compliance SS S DD please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS Switch mode power supply (SMPS) PRODUCT SUMMARY Uninterruptible power supply V (V) 600 DS High speed power switching R ()V = 10 V 0.75 DS(on) GS High voltage isolation = 2.5 kV (t = 60 s, f = 60 Hz) Q max. (nC) 49 RMS g Q (nC) 13 gs TYPICAL SMPS TOPOLOGIES Q (nC) 20 gd Single transistor forward Configuration Single Active clamped forward ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIB6N60APbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 5.5 C Continuous drain current V at 10 V I GS D T = 100 C 3.5 C a Pulsed drain current I 37 DM Linear derating factor 0.48 W/C b Single pulse avalanche energy E 290 mJ AS a Repetitive avalanche current I 9.2 A AR a Repetitive avalanche energy E 6.0 mJ AR Maximum power dissipation T = 25 C P 60 W C D c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 6.8 mH, R = 25 , I = 9.2 A (see fig. 12) J G AS c. I 9.2 A, dI/dt 50 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0471-Rev. E, 17-May-2021 Document Number: 91175 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFIB6N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -2.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D d V temperature coefficient V /T Reference to 25 C, I = 1 mA - 660 - mV/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.3 A - - 0.75 DS(on) GS D Forward transconductance g V = 25 V, I = 5.5 A 5.5 - - S fs DS D Dynamic Input capacitance C - 1400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 180- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -7.1- rss pF V = 1.0 V, f = 1.0 MHz - 1957 - DS Output capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 49 - GS DS c Effective output capacitance C eff. V = 0 V to 480 V -96 - oss DS Total gate charge Q -- 49 g I = 9.2 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-drain charge Q -- 20 gd Turn-on delay time t -13 - d(on) = 300 V, I = 9.2 A, V DD D Rise time t -25 - r R = 9.1 , R = 35.5 , ns G D Turn-off delay time t -3 b 0- d(off) see fig. 10 Fall time t -22- f Gate input resistance R f = 1 MHz, open drain 0.5 - 3.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 5.5 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 37 SM S b Body diode voltage V T = 25 C, I = 9.2 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 530 800 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.0 4.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss oss DS DS d. t = 60 s, f = 60 Hz S21-0471-Rev. E, 17-May-2021 Document Number: 91175 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000