MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOSP6
600VCoolMOSP6PowerTransistor
IPx60R230P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket600VCoolMOSP6PowerTransistor
IPW60R230P6,IPB60R230P6,IPP60R230P6,
IPA60R230P6
TO-247 DPAK TO-220
1Description
tab
tab
CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
2
pioneeredbyInfineonTechnologies.CoolMOSP6seriescombinesthe
1
3
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
TO-220FP
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
IncreasedMOSFETdv/dtruggedness
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Drain
Veryhighcommutationruggedness Pin 2, Tab
Easytouse/drive
Pb-freeplating,Halogenfreemoldcompound
Gate
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
Pin 1
andJESD22)
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
R 230 m
DS(on),max
Q 31 nC
g.typ
I 48 A
D,pulse
E @400V 4.2 J
oss
Body diode di/dt 500 A/s
Type/OrderingCode Package Marking RelatedLinks
IPW60R230P6 PG-TO 247
IPB60R230P6 PG-TO 263
6R230P6 see Appendix A
IPP60R230P6 PG-TO 220
IPA60R230P6 PG-TO 220 FullPAK
Final Data Sheet 2 Rev.2.2,2015-07-10