IRFIB7N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Low gate charge Q results in simple drive g requirement Improved gate, avalanche and dynamic dV/d t ruggedness G Fully characterized capacitance and avalanche voltage and current Effective C specified oss SS S DD Material categorization: for definitions of compliance G N-Channel MOSFET please see www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Switch mode power supply (SMPS) V (V) 500 DS Uninterruptible power supply R ()V = 10 V 0.52 DS(on) GS High speed power switching Q (Max.) (nC) 52 g High voltage isolation = 2.5 kV (t = 60 s, f = 60 Hz) RMS Q (nC) 13 gs TYPICAL SMPS TOPOLOGIES Q (nC) 18 gd Two transistor forward Configuration Single Half and full bridge convertors Power factor correction boost ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIB7N50APbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS f Continuous drain current T = 25 C 6.6 C V at 10 V I GS D Continuous drain current T = 100 C 4.2 A C a, e Pulsed drain current I 44 DM Linear derating factor 0.48 W/C b, e Single pulse avalanche energy E 275 mJ AS a, e Repetitive avalanche current I 11 A AR a Repetitive avalanche energy E 6.0 mJ AR Maximum power dissipation T = 25 C P 60 W C D c, e Peak diode recovery dV/dt dV/dt 6.9 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 4.5 mH, R = 25 , I = 11 A (see fig. 12) J G AS c. I 11 A, dI/dt 140 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. Uses IRFB11N50A, SiHFB11N50A data and test conditions f. Drain current limited by maximum junction temperature S21-0471-Rev. C, 17-May-2021 Document Number: 91176 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFIB7N50A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -2.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D d V temperature coefficient V /T Reference to 25 C, I = 1 mA - 610 - mV/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 4.0 A - - 0.52 DS(on) GS D d Forward transconductance g V = 50 V, I = 6.6 A 6.1 - - S fs DS D Dynamic Input capacitance C - 1423 - iss V = 0 V, GS Output capacitance C -V = 25 V, 208- oss DS d f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -8.1- rss pF V = 1.0 V, f = 1.0 MHz - 2000 - DS Output capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 55 - GS DS c, d Effective output capacitance C eff. V = 0 V to 400 V -97 - oss DS Total gate charge Q -- 52 g I = 11 A, V = 400 V D DS Gate-source charge Q --V = 10 V 13 nC gs GS b, d see fig. 6 and 13 Gate-drain charge Q --18 gd Turn-on delay time t -14 - d(on) V = 250 V, I = 11 A DD D Rise time t -35 - r R = 9.1 , R = 22 , ns G D b, d Turn-off delay time t -32- d(off) see fig. 10 Fall time t -28- f Drain-Source Body Diode Characteristics MOSFET symbol D -- 6.6 Continuous source-drain diode current I S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 44 SM S b Body diode voltage V T = 25 C, I = 11 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 510 770 ns rr b, d T = 25 C, I = 11 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.4 5.1 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss oss DS DS d. Uses IRFB11N50A, SiHFB11N50A data and test conditions S21-0471-Rev. C, 17-May-2021 Document Number: 91176 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000