IRFI740GLC www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Ultra low gate charge Reduced gate drive requirement Enhanced 30 V V rating GS Isolated package G High voltage isolation = 2.5 kV (t = 60 s, f = 60 Hz) RMS Sink to lead creepage distance = 4.8 mm Repetitive avalanche rated SS S Material categorization: for definitions of compliance DD G please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY This series of low charge power MOSFETs achiev e significantly lower gate charge over conventional MOSFETs. V (V) 400 DS Utilizing advanced power MOSFETs technology, the device R ()V = 10 V 0.55 DS(on) GS improvements allow for reduced gate drive requirements, Q max. (nC) 39 g faster switching speeds and increased total system savings. These device improvements combined with the proven Q (nC) 10 gs ruggedness and reliability that are characteristic of Power Q (nC) 19 gd MOSFETs offer the designer a new standard in power Configuration Single transistors for switching applications. The TO-220 FULLPAK eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI740GLCPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 400 DS V Gate-source voltage V 30 GS T = 25 C 5.7 C Continuous drain current V at 10 V I GS D T = 100 C 3.6 A C a Pulsed drain current I 23 DM Linear derating factor 0.32 W/C b Single pulse avalanche energy E 310 mJ AS a Repetitive avalanche current I 5.7 A AR a Repetitive avalanche energy E 4.0 mJ AR Maximum power dissipation T = 25 C P 40 W C D c Peak diode recovery dV/dt dV/dt 4.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 16 mH, R = 25 , I = 5.7 A (see fig. 12) DD J g AS c. I 10 A, dI/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0457-Rev. B, 10-May-2021 Document Number: 91155 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFI740GLC www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 400 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.76 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.4 A - - 0.55 DS(on) GS D b Forward transconductance g V = 50 V, I = 6.0 A 3.0 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 190- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 39 g I = 10 A, V = 320 V, D DS Gate-source charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --19 gd Turn-on delay time t -11 - d(on) V = 200 V, I = 10 A, DD D Rise time t -31 - r R = 9.1 R = 20 , ns g , D Turn-off delay time t -2 b 5- d(off) see fig. 10 Fall time t -20- f Gate input resistance R f = 1 MHz, open drain 0.3 - 1.7 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 5.7 S showing the A integral reverse G p - n junction diode a Pulsed diode forward current I -- 23 S SM b Body diode voltage V T = 25 C, I = 5.7 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 380 570 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -2.8 4.2 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0457-Rev. B, 10-May-2021 Document Number: 91155 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000