IRFI840GLC www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Ultra low gate charge Reduced gate drive requirement Enhanced 30 V V rating GS Isolated package G High voltage isolation = 2.5 kV (t = 60 s f = 60 Hz) RMS Sink to lead creepage distance = 4.8 mm Repetitive avalanche rated SS S Material categorization: for definitions of compliance DD G please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY This series of low charge power MOSFETs achiev e significantly lower gate charge over conventional MOSFETs. V (V) 500 DS Utilizing advanced power MOSFET technology, the device R ()V = 10 V 0.85 DS(on) GS improvements allow for reduced gate drive requirements, Q max. (nC) 39 g faster switching speeds and increased total system savings. These device improvements combined with the proven Q (nC) 10 gs ruggedness and reliability that are characteristic of Q (nC) 19 gd MOSFETs offer the designer a new standard in power Configuration Single transistors for switching applications. The TO-220 FULLPAK eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI840GLCPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 4.5 C Continuous drain current V at 10 V I GS D T = 100 C 2.9 A C a Pulsed drain current I 18 DM Linear derating factor 0.32 W/C b Single pulse avalanche energy E 300 mJ AS a Repetitive avalanche current I 4.5 A AR a Repetitive avalanche energy E 4.0 mJ AR Maximum power dissipation T = 25 C P 40 W C D c Peak diode recovery dV/dt dV/dt 3.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 26 mH, R = 25 , I = 4.5 A (see fig. 12) DD J G AS c. I 8.0 A, dI/dt 100 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0459-Rev. B, 10-May-2021 Document Number: 91160 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFI840GLC www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.7 A - - 0.85 m DS(on) GS D b Forward transconductance g V = 50 V, I = 4.8 A 4.0 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 39 g I = 8.0 A, V = 400 V D DS Gate-source charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --19 gd Turn-on delay time t -12 - d(on) V = 250 V, I = 8.0 A, DD D Rise time t -25 - r R = 9.1 Rr = 30 , V = 10 V, ns G , D GS Turn-off delay time t -2 b 7- d(off) see fig. 10 Fall time t -19- f Gate input resistance R f = 1 MHz, open drain 0.7 - 3.7 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 4.5 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 18 SM S b Body diode voltage V T = 25 C, I = 4.5 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 490 740 ns rr b T = 25 C, I = 8.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.0 4.5 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0459-Rev. B, 10-May-2021 Document Number: 91160 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000