IRFI9520G www.vishay.com Vishay Siliconix Power MOSFET FEATURES S TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) G Sink to lead creepage distance = 4.8 mm P-channel 175 C operating temperature Dynamic dV/dt rating SS D DD Low thermal resistance G P-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) -100 DS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, R ()V = -10 V 0.60 DS(on) GS ruggedized device design, low on-resistance and Q (Max.) (nC) 18 g cost-effectiveness. Q (nC) 3.0 gs The TO-220 FULLPAK eliminates the need for additiona l Q (nC) 9.0 gd insulating hardware in commercial-industrial applications. Configuration Single The moulding compound used provides a high isolatio n capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI9520GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -5.2 C Continuous drain current V at -10 V I GS D T = 100 C -3.6 A C a Pulsed drain current I -21 DM Linear derating factor 0.24 W/C b Single pulse avalanche energy E 300 mJ AS a Repetitive avalanche current I -5.2 A AR a Repetitive avalanche energy E 3.7 mJ AR Maximum power dissipation T = 25 C P 37 W C D c Peak diode recovery dV/dt dV/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 16 mH, R = 25 , I = -5.2 A (see fig. 12) DD J G AS c. I -6.8 A, dI/dt 110 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0459-Rev. B, 10-May-2021 Document Number: 91162 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFI9520G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -4.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.10 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -3.1 A - - 0.60 DS(on) GS D b Forward transconductance g V = -50 V, I = -3.1 A 1.9 - - S fs DS D Dynamic Input capacitance C - 390 - iss V = 0 V, GS Output capacitance C -V = -25 V, 170- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -45- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 18 g I = -6.8 A, V = -80 V, D DS Gate-source charge Q --V = -10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --9.0 gd Turn-on delay time t -9.6 - d(on) V = -50 V, I = -6.8 A, Rise time t DD D -29 - r R = 18 R = 7.1 , ns G , D Turn-off delay time t -2b 1- d(off) see fig. 10 Fall time t -25- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -5.2 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- -21 SM S b Body diode voltage V T = 25 C, I = -5.2 A, V = 0 V -- -6.3 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = -6.8 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.66 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0459-Rev. B, 10-May-2021 Document Number: 91162 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000