IRFI4228PbF Features Key Parameters Advanced Process Technology V max 150 V DS Key Parameters Optimized for PDP Sustain, V typ. 180 V Energy Recovery and Pass Switch Applications DS (Avalanche) Low E Rating to Reduce Power R typ. 10V m 12.2 PULSE DS(ON) Dissipation in PDP Sustain, Energy Recovery I max T = 100C 61 A RP C and Pass Switch Applications T max 150 C J Low Q for Fast Response G High Repetitive Peak Current Capability for D D Reliable Operation Short Fall & Rise Times for Fast Switching 150C Operating Junction Temperature for Improved Ruggedness S G Repetitive Avalanche Capability for Robustness D G and Reliability S TO-220AB Full-Pak GD S Gate Drain Source Description HEXFET Power MOSFET MOSFET MOSFET %& ( ) * * ) MOSFET + * * Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Source Voltage V GS I T = 25C Continuous Drain Current, V 10V 34 A D C GS I T = 100C Continuous Drain Current, V 10V 21 D C GS I 130 Pulsed Drain Current DM I T = 100C Repetitive Peak Current 61 RP C P T = 25C 46 Power Dissipation W D C P T = 100C Power Dissipation 18 D C 0.37 Linear Derating Factor W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.73 C/W JC Junction-to-Ambient R 65 JA Notes through are on page 8 www.irf.com 1 06/26/06 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 150 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 190 mV/C D DSS J R V = 10V, I = 20A Static Drain-to-Source On-Resistance 12.2 16 m GS D DS(on) V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -12 mV/C GS(th) J V = 150V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 150V, V = 0V, T = 125C 1.0 mA DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 20A Forward Transconductance 64 S DS D fs V = 75V, I = 20A, V = 10V Q Total Gate Charge 73 110 nC g DD D GS Q Gate-to-Drain Charge 20 gd t Shoot Through Blocking Time 100 ns V = 120V, V = 15V, R = 5.1 st DD GS G L = 220nH, C= 0.3F, V = 15V GS 62 E V = 120V, R = 5.1, T = 25C Energy per Pulse J DS G J PULSE L = 220nH, C= 0.3F, V = 15V GS 110 V = 120V, R = 5.1, T = 100C DS G J V = 0V C Input Capacitance 4560 iss GS C V = 25V Output Capacitance 560 pF DS oss C Reverse Transfer Capacitance 110 = 1.0MHz rss C eff. V = 0V, V = 0V to 120V Effective Output Capacitance 460 GS DS oss L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 170 mJ AS E 4.6 mJ Repetitive Avalanche Energy AR V Repetitive Avalanche Voltage 180 V DS(Avalanche) I 20 Avalanche Current A AS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I T = 25C Continuous Source Current 34 MOSFET symbol S C (Body Diode) A showing the I integral reverse Pulsed Source Current 130 SM (Body Diode) p-n junction diode. V T = 25C, I = 20A, V = 0V Diode Forward Voltage 1.3 V J S GS SD T = 25C, I = 20A, V = 50V t Reverse Recovery Time 74 110 ns rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 230 350 nC rr 2 www.irf.com