IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package V (V) 250 DS Available High Voltage Isolation = 2.5 kV (t = 60 s RMS R ()V = 10 V 0.28 DS(on) GS f = 60 Hz) RoHS* Q (Max.) (nC) 68 COMPLIANT g Sink to Lead Creepage Distance = 4.8 mm Q (nC) 11 gs Dynamic dV/dt Rating Q (nC) 35 gd Low Thermal Resistance Configuration Single Lead (Pb)-free Available D TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation S capability and a low thermal resistance between the tab and S D G N-Channel MOSFET external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK IRFI644GPbF Lead (Pb)-free SiHFI644G-E3 IRFI644G SnPb SiHFI644G ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 7.9 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.0 A C a Pulsed Drain Current I 32 DM Linear Derating Factor 0.32 W/C b Single Pulse Avalanche Energy E 600 mJ AS a Repetitive Avalanche Current I 7.9 A AR a Repetitive Avalanche Energy E 4.0 mJ AR Maximum Power Dissipation T = 25 C P 40 W C D c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 15 mH, R = 25 , I = 7.9 A (see fig. 12). DD J G AS c. I 7.9 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91151 www.vishay.com S-81290-Rev. A, 16-Jun-08 1IRFI644G, SiHFI644G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -3.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.34 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 4.7 A - - 0.28 DS(on) GS D b Forward Transconductance g V = 50 V, I = 4.7 A 6.0 - - S fs DS D Dynamic Input Capacitance C - 1300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 330- oss DS pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -85- rss Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Q -- 68 g I = 7.9 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 11 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --35 gd Turn-On Delay Time t -11 - d(on) V = 125 V, I = 7.9 A, Rise Time t DD D -24 - r R = 9.1 R = 16 , ns G , D b Turn-Off Delay Time t -53- d(off) see fig. 10 Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7.9 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 32 SM S b Body Diode Voltage V T = 25 C, I = 7.9 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 250 500 ns rr b T = 25 C, I = 7.9 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.3 4.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91151 2 S-81290-Rev. A, 16-Jun-08