X-On Electronics has gained recognition as a prominent supplier of PMF170XP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMF170XP,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMF170XP,115 Nexperia

PMF170XP,115 electronic component of Nexperia
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Part No.PMF170XP,115
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 1A (Ta) 290mW (Ta), 1.67W (Tc) Surface Mount SOT-323
Datasheet: PMF170XP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 56608
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6416
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0911
50 : USD 0.0736
150 : USD 0.0648
500 : USD 0.0582
3000 : USD 0.0529
6000 : USD 0.0502

56608
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.1342
100 : USD 0.0693
1000 : USD 0.0627
3000 : USD 0.0484
9000 : USD 0.0429
24000 : USD 0.0418
45000 : USD 0.0385
99000 : USD 0.0374

8730
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0408

10456
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 2740
Multiples : 1
2740 : USD 0.0732

2950
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 830
Multiples : 1
830 : USD 0.0861

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMF170XP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMF170XP,115 and other electronic components in the MOSFETs category and beyond.

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PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low R DSon Very fast switching Trench MOSFET technology 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T 25 C 1 - - -1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -1 A T = 25 C - 175 200 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source G 3 D drain 1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMF170XP SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMF170XP XD% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T 25 C 1 - -1 A D GS amb V = -4.5 V T = 100 C 1 - -0.7 A GS amb I peak drain current T = 25 C single pulse t 10 s - -4 A DM amb p P total power dissipation T = 25 C 2 - 290 mW tot amb 1 - 360 mW T = 25 C - 1670 mW sp T junction temperature -55 150 C j PMF170XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 October 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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