PD - 91368B
IRFL4310
HEXFET Power MOSFET
D
V = 100V
l Surface Mount DSS
l Dynamic dv/dt Rating
l Fast Switching
R = 0.20W
DS(on)
l Ease of Paralleling
G
l Advanced Process Technology
l Ultra Low On-Resistance
I = 1.6A
D
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
SOT-223
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V** 2.2
D A GS
I @ T = 25C Continuous Drain Current, V @ 10V* 1.6
D A GS
A
I @ T = 70C Continuous Drain Current, V @ 10V* 1.3
D A GS
I Pulsed Drain Current 13
DM
P @T = 25C Power Dissipation (PCB Mount)** 2.1 W
D A
P @T = 25C Power Dissipation (PCB Mount)* 1.0 W
D A
Linear Derating Factor (PCB Mount)* 8.3 mW/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 47 mJ
AS
I Avalanche Current 1.6 A
AR
E Repetitive Avalanche Energy* 0.10 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T T Junction and Storage Temperature Range -55 to + 150 C
J, STG
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Amb. (PCB Mount, steady state)* 93 120
qJA
C/W
R Junction-to-Amb. (PCB Mount, steady state)** 48 60
qJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com 1
5/11/99IRFL4310
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
(BR)DSS GS D
DV /DT Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA
(BR)DSS J D
0.20 W V = 10V, I = 1.6A
GS D
R Static Drain-to-Source On-Resistance
DS(on)
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 1.5 S V = 50V, I = 0.80 A
fs DS D
25 V = 100V, V = 0V
DS GS
I Drain-to-Source Leakage Current
DSS A
250 V = 80V, V = 0V, T = 125C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I
nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 17 25 I = 1.6A
g D
Q Gate-to-Source Charge 2.1 3.1 nC V = 80V
gs DS
Q Gate-to-Drain Mille) Charge 7.8 12 V = 10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 7.8 V = 50V
d(on) DD
t Rise Time 18 I = 1.6A
r D
ns
t Turn-Off Delay Time 34 R = 6.2 W
d(off) G
t Fall Time 20 R = 31 W, See Fig. 10
f D
C Input Capacitance 330 V = 0V
iss GS
C Output Capacitance 92 pF V = 25V
oss DS
C Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I Continuous Source Current MOSFET symbol
S
0.91
(Body Diode) showing the
A
I Pulsed Source Current integral reverse
SM
13
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 1.6A, V = 0V
SD J S GS
t Reverse Recovery Time 72 110 ns T = 25C, I = 1.6A
rr J F
Q Reverse RecoveryCharge 210 320 nC di/dt = 100A/s
rr
Notes:
Repetitive rating; pulse width limited by
I 1.6A, di/dt 340A/s, V V ,
SD DD (BR)DSS
max. junction temperature. ( See fig. 11 )
T 150C
J
V = 25V, starting T = 25C, L = 9.2 mH
DD J
Pulse width 300s; duty cycle 2%.
R = 25W, I = 3.2A. (See Figure 12)
G AS
2 www.irf.com