IRFI530G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G 175 C operating temperature Dynamic dV/dt rating Low thermal resistance SS S DD Material categorization: for definitions of compliance G N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 100 DS designer with the best combination of fast switching, R ()V = 10 V 0.16 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 33 cost-effectiveness. g Q (nC) 5.4 The TO-220 FULLPAK eliminates the need for additional gs insulating hardware in commercial-industrial applications. Q (nC) 15 gd The molding compound used provides a high isolation Configuration Single capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFI530GPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 9.7 C Continuous drain current V at 10 V I GS D T = 100 C 6.9 A C a Pulsed drain current I 39 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 100 mJ AS a Repetitive avalanche current I 9.7 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C P 42 W C D c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 1.6 mH, R = 25 , I = 9.7 A (see fig. 12) DD J g AS c. I 9.7 A, dI/dt 140 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0454-Rev. B, 10-May-2021 Document Number: 90180 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFI530G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 5.8 A - - 0.16 DS(on) GS D b Forward transconductance g V = 50 V, I = 5.8 A 4.0 - - S fs DS D Dynamic Input capacitance C - 670 - iss V = 0 V, GS Output capacitance C -V = 25 V, 250- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -60- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 33 g I = 9.7 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --15 gd Turn-on delay time t -8.6 - d(on) V = 50 V, I = 9.7 A, DD D Rise time t -28 - r R = 12 R = 5.1 , ns g , D Turn-off delay time t -3 b 4- d(off) see fig. 10 Fall time t -25- f Gate input resistance R f = 1 MHz, open drain 0.5 - 2.7 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 9.7 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 39 SM S b Body diode voltage V T = 25 C, I = 9.7 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 150 280 ns rr b T = 25 C, I = 9.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.85 1.7 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0454-Rev. B, 10-May-2021 Document Number: 90180 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000